Suppr超能文献

超高迁移率砷化镓量子阱中准自由二维电子气的线性磁阻

Linear Magnetoresistance in a Quasifree Two-Dimensional Electron Gas in an Ultrahigh Mobility GaAs Quantum Well.

作者信息

Khouri T, Zeitler U, Reichl C, Wegscheider W, Hussey N E, Wiedmann S, Maan J C

机构信息

High Field Magnet Laboratory (HFML-EMFL), Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands.

Radboud University, Institute of Molecules and Materials, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands.

出版信息

Phys Rev Lett. 2016 Dec 16;117(25):256601. doi: 10.1103/PhysRevLett.117.256601. Epub 2016 Dec 14.

Abstract

We report a high-field magnetotransport study of an ultrahigh mobility (μ[over ¯]≈25×10^{6}  cm^{2} V^{-1} s^{-1}) n-type GaAs quantum well. We observe a strikingly large linear magnetoresistance (LMR) up to 33 T with a magnitude of order 10^{5}% onto which quantum oscillations become superimposed in the quantum Hall regime at low temperature. LMR is very often invoked as evidence for exotic quasiparticles in new materials such as the topological semimetals, though its origin remains controversial. The observation of such a LMR in the "simplest system"-with a free electronlike band structure and a nearly defect-free environment-excludes most of the possible exotic explanations for the appearance of a LMR and rather points to density fluctuations as the primary origin of the phenomenon. Both, the featureless LMR at high T and the quantum oscillations at low T follow the empirical resistance rule which states that the longitudinal conductance is directly related to the derivative of the transversal (Hall) conductance multiplied by the magnetic field and a constant factor α that remains unchanged over the entire temperature range. Only at low temperatures, small deviations from this resistance rule are observed beyond ν=1 that likely originate from a different transport mechanism for the composite fermions.

摘要

我们报道了对一个超高迁移率(μ[上划线]≈25×10⁶ cm² V⁻¹ s⁻¹)的n型砷化镓量子阱进行的高场磁输运研究。我们观察到在高达33 T的磁场下出现了惊人的大线性磁电阻(LMR),其大小约为10⁵%,在低温的量子霍尔 regime中,量子振荡叠加在其上。LMR经常被用作新材料(如拓扑半金属)中奇异准粒子的证据,尽管其起源仍存在争议。在这个“最简单的系统”(具有类自由电子能带结构和几乎无缺陷的环境)中观察到这样的LMR,排除了对LMR出现的大多数可能的奇异解释,而是指出密度涨落是该现象的主要起源。高温下无特征的LMR和低温下的量子振荡都遵循经验电阻规则,该规则指出纵向电导与横向(霍尔)电导的导数乘以磁场和一个在整个温度范围内保持不变的常数因子α直接相关。仅在低温下,在ν = 1之外观察到与该电阻规则的小偏差,这可能源于复合费米子的不同输运机制。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验