Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania.
Faculty of Electronics, Vilnius Gediminas Technical University, 10223 Vilnius, Lithuania.
Sensors (Basel). 2023 Mar 8;23(6):2939. doi: 10.3390/s23062939.
Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures. However, there is a lack of commercial sensors for measurements of high magnetic fields, from ∼1 T up to megagauss. Therefore, the search for advanced materials and the engineering of nanostructures exhibiting extraordinary properties or new phenomena for high magnetic field sensing applications is of great importance. The main focus of this review is the investigation of thin films, nanostructures and two-dimensional (2D) materials exhibiting non-saturating magnetoresistance up to high magnetic fields. Results of the review showed how tuning of the nanostructure and chemical composition of thin polycrystalline ferromagnetic oxide films (manganites) can result in a remarkable colossal magnetoresistance up to megagauss. Moreover, by introducing some structural disorder in different classes of materials, such as non-stoichiometric silver chalcogenides, narrow band gap semiconductors, and 2D materials such as graphene and transition metal dichalcogenides, the possibility to increase the linear magnetoresistive response range up to very strong magnetic fields (50 T and more) and over a large range of temperatures was demonstrated. Approaches for the tailoring of the magnetoresistive properties of these materials and nanostructures for high magnetic field sensor applications were discussed and future perspectives were outlined.
先进的科学和工业设备需要尺寸减小的磁场传感器，同时在宽磁场和宽温度范围内保持高灵敏度。然而，对于高达兆高斯的强磁场测量，缺乏商业用途的传感器。因此，寻找在强磁场感应应用中表现出非凡性能或新现象的先进材料和纳米结构工程具有重要意义。本综述的主要重点是研究在高达强磁场下表现出非饱和磁电阻的薄膜、纳米结构和二维（2D）材料。综述结果表明，如何调整薄膜的纳米结构和化学成分（例如锰氧化物）可以导致高达兆高斯的显著庞磁电阻。此外，通过在不同类别的材料中引入一些结构无序，例如非化学计量的银硫属化物、窄带隙半导体以及 2D 材料（如石墨烯和过渡金属二硫属化物），有可能将线性磁电阻响应范围扩展到非常强的磁场（50T 及以上）和宽温度范围。讨论了这些材料和纳米结构的磁电阻特性的调整方法，以用于强磁场传感器应用，并概述了未来的展望。
