Liu Jiang, Wang Gang, Luo Kun, He Xulin, Ye Qinyan, Liao Cheng, Mei Jun
Chengdu Green Energy and Green Manufacturing Technology R&D Center, Chengdu Development Center of Science and Technology, China Academy of Engineering Physics, Chengdu, 610207, P. R. China.
Chemphyschem. 2017 Mar 17;18(6):617-625. doi: 10.1002/cphc.201601245. Epub 2017 Jan 27.
Solar cells based on perovskite absorbers are rapidly emerging as attractive candidates for photovoltaics development. Understanding the role of the electron-transport layer (ETL) is very important to obtain highly efficient perovskite solar cells. Herein, the effect of the ETL on device performance in planar perovskite solar cells is investigated in detail, and the band bending in different situations is discussed. The ET barrier is shown to be responsible for the poor fill factor (FF) of J-V curves. Introduction of a thin bathocuproine interlayer increases the interface inversion and results in an increase of FF from 56 to 76 %. Some experimental and theoretical results verify these conclusions. Furthermore, this study can provide an interface-engineering strategy to improve device performance.
基于钙钛矿吸收体的太阳能电池正迅速成为光伏发展中具有吸引力的候选者。了解电子传输层(ETL)的作用对于获得高效的钙钛矿太阳能电池非常重要。在此,详细研究了ETL对平面钙钛矿太阳能电池器件性能的影响,并讨论了不同情况下的能带弯曲。结果表明,ET势垒是J-V曲线填充因子(FF)较低的原因。引入一层薄的联喹啉铜中间层可增加界面反转,并使FF从56%提高到76%。一些实验和理论结果证实了这些结论。此外,本研究可为改善器件性能提供一种界面工程策略。