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量子霍尔效应击穿电压对磁场和电流的依赖性。

Dependence of Quantized Hall Effect Breakdown Voltage on Magnetic Field and Current.

作者信息

Cage M E

机构信息

National Institute of Standards and Technology, Gaithersburg, MD 20899-0001.

出版信息

J Res Natl Inst Stand Technol. 1993 May-Jun;98(3):361-373. doi: 10.6028/jres.098.028.

DOI:10.6028/jres.098.028
PMID:28053479
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4914241/
Abstract

When large currents are passed through a high-quality quantized Hall resistance device the voltage drop along the device is observed to assume discrete, quantized states if the voltage is plotted versus the magnetic field. These quantized dissipative voltage states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The quantization is found to be, in general, both a function of magnetic field and current. Consequently, it can be more difficult to verify and determine dissipative voltage quantization than previously suspected.

摘要

当大电流通过高质量的量子化霍尔电阻器件时,如果将电压与磁场作图,会观察到沿该器件的电压降呈现离散的量子化状态。这些量子化的耗散电压状态被解释为电子被激发到更高的朗道能级然后回到原始朗道能级时发生的情况。一般发现,这种量子化既是磁场的函数也是电流的函数。因此,验证和确定耗散电压量子化可能比之前认为的更困难。

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引用本文的文献

1
Spectroscopic Study of Quantized Breakdown Voltage States of the Quantum Hall Effect.量子霍尔效应中量子化击穿电压态的光谱研究。
J Res Natl Inst Stand Technol. 1994 Nov-Dec;99(6):757-764. doi: 10.6028/jres.099.068.
2
Potential and Current Distributions Calculated Across a Quantum Hall Effect Sample at Low and High Currents.在低电流和高电流下跨量子霍尔效应样品计算的电势和电流分布。
J Res Natl Inst Stand Technol. 1995 Sep-Oct;100(5):529-541. doi: 10.6028/jres.100.040.
3
Using Quantized Breakdown Voltage Signals to Determine the Maximum Electric Fields in a Quantum Hall Effect Sample.

本文引用的文献

1
Observation and an Explanation of Breakdown of the Quantum Hall Effect.量子霍尔效应击穿的观测与解释
J Res Natl Inst Stand Technol. 1990 Jan-Feb;95(1):93-99. doi: 10.6028/jres.095.009.
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利用量子化击穿电压信号确定量子霍尔效应样品中的最大电场。
J Res Natl Inst Stand Technol. 1995 May-Jun;100(3):269-276. doi: 10.6028/jres.100.019.
4
Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect.量子霍尔效应击穿中电压而非电阻被量子化的证据。
J Res Natl Inst Stand Technol. 1996 Mar-Apr;101(2):175-180. doi: 10.6028/jres.101.019.
5
Current Distributions in Quantum Hall Effect Devices.量子霍尔效应器件中的电流分布
J Res Natl Inst Stand Technol. 1997 Nov-Dec;102(6):677-691. doi: 10.6028/jres.102.045.
Evidence for an inhomogeneity size effect in narrow GaAs/ AlxGa1-xAs constrictions.
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Voltage-controlled dissipation in the quantum Hall effect in a laterally constricted two-dimensional electron gas.
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