Lavine C F, Cage M E, Elmquist R E
National Institute of Standards and Technology, Gaithersburg, MD 20899-0001.
J Res Natl Inst Stand Technol. 1994 Nov-Dec;99(6):757-764. doi: 10.6028/jres.099.068.
Quantized breakdown voltage states are observed in a second, wide, high-quality GaAs/AlGaAs sample made from another wafer, demonstrating that quantization of the longitudinal voltage drop along the sample is a general feature of the quantum Hall effect in the breakdown regime. The voltage states are interpreted in a simple energy conservation model as occurring when electrons are excited to higher Landau levels and then return to the original level. A spectroscopic study of these dissipative voltage states reveals how well they are quantized. The statistical variations of the quantized voltages increase linearly with quantum number.
在由另一个晶片制成的第二个宽的、高质量的GaAs/AlGaAs样品中观察到了量子化击穿电压状态，这表明沿样品纵向电压降的量子化是击穿 regime中量子霍尔效应的一个普遍特征。电压状态在一个简单的能量守恒模型中被解释为电子被激发到更高朗道能级然后回到原始能级时发生的情况。对这些耗散电压状态的光谱研究揭示了它们量子化的程度。量子化电压的统计变化随量子数线性增加。
