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量子霍尔效应击穿的观测与解释

Observation and an Explanation of Breakdown of the Quantum Hall Effect.

作者信息

Cage M E, Yu D Y, Reedtz G Marullo

机构信息

National Institute of Standards and Technology, Gaithersburg, MD 20899.

出版信息

J Res Natl Inst Stand Technol. 1990 Jan-Feb;95(1):93-99. doi: 10.6028/jres.095.009.

DOI:10.6028/jres.095.009
PMID:28179760
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4948928/
Abstract

We observe a spatially localized breakdown of the nearly dissipationless quantum Hall effect into a set of discrete dissipative states in wide, high-quality GaAs/AlGaAs samples. The phenomenon can be explained by an extension of the quasi-elastic inter-Landau level scattering model of Eaves and Sheard.

摘要

我们观察到，在宽的、高质量的砷化镓/铝镓砷样品中，近无耗散的量子霍尔效应在空间上局域性地分解为一组离散的耗散态。该现象可以通过伊夫斯和希尔德的准弹性朗道能级间散射模型的扩展来解释。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/a8ad7619a652/jresv95n1p93_a1bf6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/f97a5ec4409b/jresv95n1p93_a1bf1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/1c621277ecde/jresv95n1p93_a1bf2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/eb5aff41c7f1/jresv95n1p93_a1bf3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/8ea183caf01e/jresv95n1p93_a1bf4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/0b44db77bb86/jresv95n1p93_a1bf5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/a8ad7619a652/jresv95n1p93_a1bf6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/f97a5ec4409b/jresv95n1p93_a1bf1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/1c621277ecde/jresv95n1p93_a1bf2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/eb5aff41c7f1/jresv95n1p93_a1bf3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/8ea183caf01e/jresv95n1p93_a1bf4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/0b44db77bb86/jresv95n1p93_a1bf5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b85d/4948928/a8ad7619a652/jresv95n1p93_a1bf6.jpg

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引用本文的文献

1
Spectroscopic Study of Quantized Breakdown Voltage States of the Quantum Hall Effect.量子霍尔效应中量子化击穿电压态的光谱研究。
J Res Natl Inst Stand Technol. 1994 Nov-Dec;99(6):757-764. doi: 10.6028/jres.099.068.
2
Potential and Current Distributions Calculated Across a Quantum Hall Effect Sample at Low and High Currents.在低电流和高电流下跨量子霍尔效应样品计算的电势和电流分布。
J Res Natl Inst Stand Technol. 1995 Sep-Oct;100(5):529-541. doi: 10.6028/jres.100.040.
3
Using Quantized Breakdown Voltage Signals to Determine the Maximum Electric Fields in a Quantum Hall Effect Sample.

本文引用的文献

1
Evidence for an inhomogeneity size effect in narrow GaAs/ AlxGa1-xAs constrictions.
Phys Rev B Condens Matter. 1989 May 15;39(14):10460-10463. doi: 10.1103/physrevb.39.10460.
2
Voltage-controlled dissipation in the quantum Hall effect in a laterally constricted two-dimensional electron gas.
Phys Rev B Condens Matter. 1986 Oct 15;34(8):5414-5422. doi: 10.1103/physrevb.34.5414.
3
Distribution of the quantized Hall potential in GaAs-AlxGa1-xAs heterostructures.GaAs - AlxGa1 - xAs异质结构中量子化霍尔电势的分布
Phys Rev B Condens Matter. 1985 Oct 15;32(8):5506-5509. doi: 10.1103/physrevb.32.5506.
利用量子化击穿电压信号确定量子霍尔效应样品中的最大电场。
J Res Natl Inst Stand Technol. 1995 May-Jun;100(3):269-276. doi: 10.6028/jres.100.019.
4
Dependence of Quantized Hall Effect Breakdown Voltage on Magnetic Field and Current.量子霍尔效应击穿电压对磁场和电流的依赖性。
J Res Natl Inst Stand Technol. 1993 May-Jun;98(3):361-373. doi: 10.6028/jres.098.028.
5
Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect.量子霍尔效应击穿中电压而非电阻被量子化的证据。
J Res Natl Inst Stand Technol. 1996 Mar-Apr;101(2):175-180. doi: 10.6028/jres.101.019.
6
Current Distributions in Quantum Hall Effect Devices.量子霍尔效应器件中的电流分布
J Res Natl Inst Stand Technol. 1997 Nov-Dec;102(6):677-691. doi: 10.6028/jres.102.045.