He Junfeng, Zhang Chaofan, Ghimire Nirmal J, Liang Tian, Jia Chunjing, Jiang Juan, Tang Shujie, Chen Sudi, He Yu, Mo S-K, Hwang C C, Hashimoto M, Lu D H, Moritz B, Devereaux T P, Chen Y L, Mitchell J F, Shen Z-X
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.
Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
Phys Rev Lett. 2016 Dec 23;117(26):267201. doi: 10.1103/PhysRevLett.117.267201.
An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
最近在几种非磁性半金属中观察到了极端磁电阻（XMR）。越来越多的实验和理论证据表明，XMR可以由拓扑保护或电子-空穴补偿驱动。在这里，通过研究一种XMR材料YSb的电子结构，我们提供了光谱证据，证明了一种缺乏拓扑保护和完美电子-空穴补偿的特殊情况。进一步的研究表明，电子和空穴迁移率的显著差异以及适度的载流子补偿的协同作用可能导致YSb中的XMR。
