Pavlosiuk Orest, Kleinert Maja, Swatek Przemysław, Kaczorowski Dariusz, Wiśniewski Piotr
Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.Nr 1410, 50-950, Wrocław, Poland.
Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa, 50011, USA.
Sci Rep. 2017 Oct 9;7(1):12822. doi: 10.1038/s41598-017-12792-8.
Several rare-earth monopnictides were shown to exhibit extreme magnetoresistance and field-induced low-temperature plateau of electrical resistivity. These features are also hallmarks of topological semimetals, thus the family is intensively explored with respect to magneto-transport properties and possible hosting Dirac fermion states. We report a comprehensive investigation of Fermi surface and electrical transport properties of LuSb, another representative of this family. At low temperatures, the magnetoresistance of LuSb was found to exceed 3000% without saturation in fields up to 9 T. Analysis of the Hall effect and the Shubnikov-de Haas oscillations revealed that the Fermi surface of this compound consists of several pockets originating from fairly compensated multi-band electronic structure, in full accordance with our first-principles calculations. Observed magnetotransport properties of LuSb can be attributed to the topology of three-dimensional Fermi surface and a compensation of electron and hole contributions.
几种稀土单磷化物被证明表现出极高的磁阻和场致低温电阻率平台。这些特征也是拓扑半金属的标志,因此该家族在磁输运性质和可能存在的狄拉克费米子态方面受到了深入研究。我们报告了对该家族的另一个代表LuSb的费米面和电输运性质的全面研究。在低温下,发现LuSb的磁阻在高达9 T的磁场中超过3000%且不饱和。对霍尔效应和舒布尼科夫-德哈斯振荡的分析表明,该化合物的费米面由几个源自相当补偿的多带电子结构的口袋组成,这与我们的第一性原理计算完全一致。观察到的LuSb的磁输运性质可归因于三维费米面的拓扑结构以及电子和空穴贡献的补偿。