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通过膦合成路线制备的高发光核壳型InP/ZnX(X = S,Se)量子点。

Highly luminescent core-shell InP/ZnX (X = S, Se) quantum dots prepared via a phosphine synthetic route.

作者信息

Mordvinova Natalia, Vinokurov Alexander, Kuznetsova Tatiana, Lebedev Oleg I, Dorofeev Sergey

机构信息

Department of Chemistry, Lomonosov Moscow State University, 119991, Moscow, Russia.

Laboratoire CRISMAT UMR6508 CNRS-ENSICAEN-Normandie Université, 14050 Caen, France.

出版信息

Dalton Trans. 2017 Jan 24;46(4):1297-1303. doi: 10.1039/c6dt03956a.

DOI:10.1039/c6dt03956a
PMID:28067374
Abstract

Here we report a simple method for the creation of highly luminescent core-shell InP/ZnX (X = S, Se) quantum dots (QDs) on the basis of a phosphine synthetic route. In this method a Zn precursor was added to the reaction mixture at the beginning of the synthesis to form an In(Zn)P alloy structure, which promoted the formation of a ZnX shell. Core-shell InP/ZnX QDs exhibit highly intensive emission with a quantum yield over 50%. The proposed method is primarily important for practical applications. Advantages of this method compared to the widely used SILAR technique are discussed. We further demonstrate that the SILAR approach consisting of consequent addition of Zn and chalcogen precursors to pre-prepared non-doped InP colloidal nanoparticles is not quite suitable for shell growth without the addition of special activator agents or the use of very reactive precursors.

摘要

在此,我们报告一种基于膦合成路线制备高发光核壳型InP/ZnX(X = S、Se)量子点(QD)的简单方法。在该方法中,在合成开始时将锌前驱体添加到反应混合物中以形成In(Zn)P合金结构,这促进了ZnX壳层的形成。核壳型InP/ZnX量子点表现出高强度发射,量子产率超过50%。所提出的方法对于实际应用至关重要。讨论了该方法与广泛使用的连续离子层吸附与反应(SILAR)技术相比的优势。我们进一步证明,在不添加特殊活化剂或不使用高活性前驱体的情况下,由向预先制备的非掺杂InP胶体纳米颗粒中依次添加锌和硫族元素前驱体组成的SILAR方法不太适合壳层生长。

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