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聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸/硅混合异质结太阳能电池的光电评估与损耗分析

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

作者信息

Yang Zhenhai, Fang Zebo, Sheng Jiang, Ling Zhaoheng, Liu Zhaolang, Zhu Juye, Gao Pingqi, Ye Jichun

机构信息

Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.

Department of Physics, Shaoxing University, Shaoxing, 312000, China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):26. doi: 10.1186/s11671-016-1790-1. Epub 2017 Jan 9.

Abstract

The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

摘要

有机/硅(Si)混合异质结太阳能电池(HHSCs)因其在高效率和低成本方面的潜在优势而备受关注。然而,作为一种新兴的光伏器件,其目前的效率仍远低于商用硅太阳能电池。因此,对这种HHSC进行全面系统的光电评估和损耗分析对于充分挖掘其效率潜力非常必要。在此,对典型的平面聚合物聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐(PEDOT:PSS)/Si HHSC进行了全面的光电模拟。计算得到的反射光谱和外量子效率(EQE)在全波长范围内与实验结果吻合良好。通过仔细考虑电磁和载流子传输过程,预测了由光学损耗(即反射、电极屏蔽和寄生吸收)和电复合(即体复合和表面复合)导致的电流密度损耗。此外,还全面研究了硅掺杂浓度和背面复合速度对器件性能的影响。本研究所得结果有助于指导高性能PEDOT:PSS/Si HHSCs的设计。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e2df/5222769/9e066538e42f/11671_2016_1790_Fig1_HTML.jpg

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