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利用高纵横比 AAO 掩模制作纳米孔和纳米粒子阵列。

Fabrication of nanopore and nanoparticle arrays with high aspect ratio AAO masks.

机构信息

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China. School of Electronic Information and Engineering, Hubei University of Science and Technology, Xianning 437005, People's Republic of China.

出版信息

Nanotechnology. 2017 Mar 3;28(9):095301. doi: 10.1088/1361-6528/aa585c. Epub 2017 Jan 10.

DOI:10.1088/1361-6528/aa585c
PMID:28071590
Abstract

How to use high aspect ratio anodic aluminum oxide (AAO) membranes as an etching and evaporation mask is one of the unsolved problems in the application of nanostructured arrays. Here we describe the versatile utilizations of the highly ordered AAO membranes with a high aspect ratio of more than 20 used as universal masks for the formation of various nanostructure arrays on various substrates. The result shows that the fabricated nanopore and nanoparticle arrays of substrates inherit the regularity of the AAO membranes completely. The flat AAO substrates and uneven AAO frontages were attached to the Si substrates respectively as an etching mask, which demonstrates that the two kinds of replication, positive and negative, represent the replication of the mirroring of Si substrates relative to the flat AAO substrates and uneven AAO frontages. Our work is a breakthrough for the broad research field of surface nano-masking.

摘要

如何将高纵横比的阳极氧化铝(AAO)膜用作蚀刻和蒸发掩模,是纳米结构阵列应用中尚未解决的问题之一。在这里,我们描述了高度有序的 AAO 膜的多种用途,这些膜的纵横比超过 20,可用作各种衬底上各种纳米结构阵列形成的通用掩模。结果表明,所制备的具有纳米孔和纳米粒子的衬底阵列完全继承了 AAO 膜的规则性。将平整的 AAO 衬底和凹凸不平的 AAO 前缘分别附着在 Si 衬底上作为蚀刻掩模,这表明两种复制,即正复制和负复制,分别代表 Si 衬底相对于平整的 AAO 衬底和凹凸不平的 AAO 前缘的镜像复制。我们的工作为表面纳米掩模的广泛研究领域带来了突破。

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