Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, University of California, Riverside , Riverside, California 92521, United States.
Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
Nano Lett. 2017 Jan 11;17(1):377-383. doi: 10.1021/acs.nanolett.6b04334. Epub 2016 Dec 8.
We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe capped with quasi-2D h-BN layers. Semimetallic TaSe is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe nanowires have lower levels of the normalized noise spectral density, S/I, compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f type as temperature increases to ∼400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-1D TaSe nanowires is approximately E ≈ 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is E = 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.
我们报告了在被准二维 h-BN 层覆盖的 TaSe 准一维纳米线中低频电子过剩噪声的研究结果。半金属 TaSe 是一种具有极高击穿电流密度的准一维范德华材料。研究发现，与碳纳米管和石墨烯相比，TaSe 纳米线的归一化噪声谱密度 S/I 较低（I 是电流）。温度相关的测量表明，低频电子 1/f 噪声随着温度升高到约 400 K 变为 1/f 类型，这表明出现了电迁移（f 是频率）。使用金属中电子噪声的 Dutta-Horn 随机涨落模型，我们确定准一维 TaSe 纳米线的噪声激活能约为 E ≈ 1.0 eV。在金属互连的经验噪声模型的框架内，提取出的与电迁移相关的激活能 E = 0.88 eV，与 Cu 和 Al 互连的激活能一致。我们的研究结果揭示了准一维范德华半金属低频 1/f 噪声的物理机制，并表明此类材料系统具有最终缩小局部互连应用的潜力。
