Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, USA.
Nanoscale. 2018 Nov 1;10(42):19749-19756. doi: 10.1039/c8nr06984k.
We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density, SI/I2, reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation-recombination noise at low temperatures (I is the current and f is the frequency). Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source-drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.
我们描述了准一维 ZrTe3 范德瓦尔斯纳米带中的低频电流波动，即电子噪声。由于其非凡的高电流承载能力，最近引起了人们的关注。虽然低频噪声谱密度 SI/I2 在室温附近呈现出 1/f 行为，但在低温下主要由产生-复合噪声的洛伦兹突峰主导（I 是电流，f 是频率）。出乎意料的是，观察到的洛伦兹峰的拐角频率对施加的源-漏偏压表现出强烈的敏感性。这种对电场的依赖性可以通过弗伦克尔-波尔效应来解释，在这种情况下，电压降主要发生在缺陷上，缺陷会阻塞准一维传导通道。我们还发现，准一维 ZrTe3 中 G-R 噪声的特征频率的激活能主要由缺陷的捕获截面随温度的变化决定，而不是由它们的能量位置决定。这些结果对于准一维范德瓦尔斯材料在最终缩小尺寸的电子学中的应用非常重要。
