纳米结构氧化锡薄膜：物理合成、表征和气体传感性能。
Nanostructured tin oxide films: Physical synthesis, characterization, and gas sensing properties.
机构信息
Functional Materials Research Laboratory, School of Physical Sciences, Solapur University, Solapur 413255, MS, India.
College of Materials Science and Engineering, Shenzhen Key Laboratory of Polymer Science and Technology, Shenzhen University, Shenzhen 518060, PR China.
出版信息
J Colloid Interface Sci. 2017 May 1;493:162-170. doi: 10.1016/j.jcis.2017.01.025. Epub 2017 Jan 10.
Nanostructured tin oxide (SnO) films are synthesized using physical method i.e. thermal evaporation and are further characterized with X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy measurement techniques for confirming its structure and morphology. The chemiresistive properties of SnO films are studied towards different oxidizing and reducing gases where these films have demonstrated considerable selectivity towards oxidizing nitrogen dioxide (NO) gas with a maximum response of 403% to 100ppm @200°C, and fast response and recovery times of 4s and 210s, respectively, than other test gases. In addition, SnO films are enabling to detect as low as 1ppm NO gas concentration @200°C with 23% response enhancement. Chemiresistive performances of SnO films are carried out in the range of 1-100ppm and reported. Finally, plausible adsorption and desorption reaction mechanism of NO gas molecules with SnO film surface has been thoroughly discussed by means of an impedance spectroscopy analysis.
采用物理方法（即热蒸发）合成了纳米结构氧化锡（SnO）薄膜，并通过 X 射线衍射、X 射线光电子能谱、扫描电子显微镜、透射电子显微镜和原子力显微镜测量技术对其结构和形态进行了进一步的表征。研究了 SnO 薄膜对不同氧化还原气体的电阻变化特性，结果表明，这些薄膜对氧化氮二氧化物（NO）气体具有相当高的选择性，在 200°C 时对 100ppm 的 NO 气体的最大响应为 403%，响应和恢复时间分别为 4s 和 210s，优于其他测试气体。此外，SnO 薄膜能够在 200°C 时检测低至 1ppm 的 NO 气体浓度，响应增强了 23%。在 1-100ppm 的范围内对 SnO 薄膜的电阻变化性能进行了测试，并进行了报道。最后，通过阻抗谱分析，详细讨论了 NO 气体分子在 SnO 薄膜表面的吸附和解吸反应机制。
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