Department of Electrical & Electronic Engineering, Southern University of Science and Technology , Shenzhen 518055, China.
School of Electrical & Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore.
ACS Appl Mater Interfaces. 2017 Feb 8;9(5):4926-4931. doi: 10.1021/acsami.6b12450. Epub 2017 Jan 30.
The enhanced luminescence through semiconductor-metal interactions suggests the great potential of device performance improvement via properly tailored plasmonic nanostructures. Surface plasmon enhanced electroluminescence in an all-inorganic CsPbBr perovskite light-emitting diode (LED) is fabricated by decorating the hole transport layer with the synthesized Ag nanorods. An increase of 42% and 43.3% in the luminance and efficiency is demonstrated for devices incorporated with Ag nanorods. The device with Ag introduction indicates identical optoelectronic properties to the controlled device without Ag nanostructures. The increased spontaneous emission rate caused by the Ag-induced plasmonic near-field effect is responsible for the performance enhancement. Therefore, the plasmonic Ag-CsPbBr nanostructure studied here provides a novel strategy on the road to the future development of perovskite LEDs.
通过半导体-金属相互作用增强的发光表明，通过适当设计等离子体纳米结构，有可能改善器件性能。通过用合成的 Ag 纳米棒修饰空穴传输层，在全无机 CsPbBr 钙钛矿发光二极管（LED）中制备了表面等离子体增强电致发光。结果表明，对于掺入 Ag 纳米棒的器件，亮度和效率分别提高了 42%和 43.3%。引入 Ag 表明，具有 Ag 纳米结构的器件具有与对照器件相同的光电性能。Ag 诱导的等离子体近场效应引起的自发发射速率增加是性能增强的原因。因此，这里研究的等离子体 Ag-CsPbBr 纳米结构为钙钛矿 LED 的未来发展提供了一条新的策略。
