Lee Chang Min, Choi Dong Hyun, Islam Amjad, Kim Dong Hyun, Kim Tae Wook, Jeong Geon-Woo, Cho Hyun Woo, Park Min Jae, Shah Syed Hamad Ullah, Chae Hyung Ju, Kim Kyoung-Ho, Sujak Muhammad, Lee Jae Woo, Kim Donghyun, Kim Chul Hoon, Lee Hyun Jae, Bae Tae-Sung, Yu Seung Min, Jin Jong Sung, Kang Yong-Cheol, Park Juyun, Song Myungkwan, Kim Chang-Su, Shin Sung Tae, Ryu Seung Yoon
Division of Display and Semiconductor Physics, Display Convergence, College of Science and Technology, Korea University Sejong Campus, 2511 Sejong-ro, Sejong City, 30019, Republic of Korea.
Department of Applied Physics, Korea University Sejong Campus, 2511 Sejong-ro, Sejong City, 30019, Republic of Korea.
Sci Rep. 2022 Feb 10;12(1):2300. doi: 10.1038/s41598-022-05935-z.
Herein, an unprecedented report is presented on the incorporation of size-dependent gold nanoparticles (AuNPs) with polyvinylpyrrolidone (PVP) capping into a conventional hole transport layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The hole transport layer blocks ion-diffusion/migration in methylammonium-lead-bromide (MAPbBr)-based perovskite light-emitting diodes (PeLEDs) as a modified interlayer. The PVP-capped 90 nm AuNP device exhibited a seven-fold increase in efficiency (1.5%) as compared to the device without AuNPs (0.22%), where the device lifetime was also improved by 17-fold. This advancement is ascribed to the far-field scattering of AuNPs, modified work function and carrier trapping/detrapping. The improvement in device lifetime is attributed to PVP-capping of AuNPs which prevents indium diffusion into the perovskite layer and surface ion migration into PEDOT:PSS through the formation of induced electric dipole. The results also indicate that using large AuNPs (> 90 nm) reduces exciton recombination because of the trapping of excess charge carriers due to the large surface area.
在此，我们展示了一份前所未有的报告，内容是将尺寸依赖性金纳米颗粒（AuNPs）与聚乙烯吡咯烷酮（PVP）包覆相结合，引入到传统的空穴传输层聚（3,4 - 乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT:PSS）中。空穴传输层作为一种改性中间层，可阻止基于甲基铵铅溴化物（MAPbBr）的钙钛矿发光二极管（PeLEDs）中的离子扩散/迁移。与不含AuNPs的器件（0.22%）相比，PVP包覆的90 nm AuNP器件的效率提高了7倍（1.5%），其器件寿命也提高了17倍。这一进展归因于AuNPs的远场散射、改性的功函数以及载流子捕获/去捕获。器件寿命的提高归因于AuNPs的PVP包覆，它通过形成感应电偶极，防止铟扩散到钙钛矿层以及表面离子迁移到PEDOT:PSS中。结果还表明，使用大尺寸AuNPs（> 90 nm）可减少激子复合，这是由于大表面积导致过量电荷载流子被捕获。
