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具有非晶-晶体层状结构的硅的纳米切削：一项分子动力学研究

Nanometric Cutting of Silicon with an Amorphous-Crystalline Layered Structure: A Molecular Dynamics Study.

作者信息

Wang Jinshi, Fang Fengzhou, Zhang Xiaodong

机构信息

State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin, 300072, China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):41. doi: 10.1186/s11671-017-1829-y. Epub 2017 Jan 13.

DOI:10.1186/s11671-017-1829-y
PMID:28091952
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5236050/
Abstract

Materials with specific nanometric layers are of great value in both theoretical and applied research. The nanometric layer could have a significant influence on the response to the mechanical loading. In this paper, the nanometric cutting on the layered systems of silicon has been studied by molecular dynamics. This kind of composite structure with amorphous layer and crystalline substrate is important for nanomachining. Material deformation, stress status, and chip formation, which are the key issues in nano-cutting, are analyzed. A new chip formation mechanism, i.e., the mixture of extrusion and shear, has been observed. In addition, from the perspective of engineering, some specific composite models show the desired properties due to the low subsurface damage or large material removal rate. The results enrich the cutting theory and provide guidance on nanometric machining.

摘要

具有特定纳米层的材料在理论研究和应用研究中都具有重要价值。纳米层可能会对机械载荷响应产生重大影响。本文通过分子动力学研究了硅层状体系的纳米切削。这种具有非晶层和晶体基底的复合结构对纳米加工很重要。分析了纳米切削中的关键问题，即材料变形、应力状态和切屑形成。观察到一种新的切屑形成机制，即挤压和剪切的混合。此外，从工程角度来看，一些特定的复合模型由于表面损伤小或材料去除率高而表现出理想的性能。这些结果丰富了切削理论，并为纳米加工提供了指导。

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本文引用的文献

1
Study on nanometric cutting of germanium by molecular dynamics simulation.基于分子动力学模拟的纳米尺度下的锗切削研究。
Nanoscale Res Lett. 2013 Jan 5;8(1):13. doi: 10.1186/1556-276X-8-13.
2
Modeling solid-state chemistry: Interatomic potentials for multicomponent systems.固态化学建模：多组分体系的原子间势
Phys Rev B Condens Matter. 1989 Mar 15;39(8):5566-5568. doi: 10.1103/physrevb.39.5566.
3
Amorphous-silicon formation by rapid quenching: A molecular-dynamics study.快速淬火法制备非晶硅：分子动力学研究
Nanoscale Res Lett. 2017 Dec;12(1):404. doi: 10.1186/s11671-017-2176-8. Epub 2017 Jun 12.
Phys Rev B Condens Matter. 1987 Sep 15;36(8):4234-4237. doi: 10.1103/physrevb.36.4234.