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无氧化物硅的滑动速度依赖摩擦化学磨损

Sliding Speed-Dependent Tribochemical Wear of Oxide-Free Silicon.

作者信息

Chen Lei, Qi Yaqiong, Yu Bingjun, Qian Linmao

机构信息

Tribology Research Institute, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu, 610031, Sichuan Province, People's Republic of China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):404. doi: 10.1186/s11671-017-2176-8. Epub 2017 Jun 12.

DOI:10.1186/s11671-017-2176-8
PMID:28610397
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5468177/
Abstract

Fundamental understanding of tribochemical wear mechanism of oxide-free single crystalline silicon (without native oxide layer) is essential to optimize the process of ultra-precision surface manufacturing. Here, we report sliding speed-dependent nanowear of oxide-free silicon against SiO microspheres in air and in deionized water. When contact pressure is too low to induce Si yield, tribochemical wear occurs with the existence of water molecules and wear volume decreases logarithmically to constant as sliding speed increased. TEM and Raman observations indicate that the dynamics of rupture and reformation of interfacial bonding bridges result in the variation of tribochemical wear of the oxide-free Si with the increase of sliding speed.

摘要

对无氧化物单晶硅(无原生氧化层)的摩擦化学磨损机制的基本理解对于优化超精密表面制造工艺至关重要。在此,我们报道了在空气和去离子水中,无氧化物硅与SiO微球之间滑动速度相关的纳米磨损。当接触压力过低而无法引起硅屈服时,在水分子存在的情况下会发生摩擦化学磨损,并且随着滑动速度的增加,磨损体积呈对数下降至恒定值。透射电子显微镜(TEM)和拉曼观察表明,界面结合桥的断裂和重新形成动力学导致无氧化物硅的摩擦化学磨损随滑动速度的增加而变化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/592094863a7d/11671_2017_2176_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/c1d72885cc4e/11671_2017_2176_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/b8f199fdb68d/11671_2017_2176_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/dbcf4508b121/11671_2017_2176_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/a14b92f24d24/11671_2017_2176_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/32ec30858055/11671_2017_2176_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/592094863a7d/11671_2017_2176_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/c1d72885cc4e/11671_2017_2176_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/b8f199fdb68d/11671_2017_2176_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/dbcf4508b121/11671_2017_2176_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/a14b92f24d24/11671_2017_2176_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/32ec30858055/11671_2017_2176_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/146a/5468177/592094863a7d/11671_2017_2176_Fig6_HTML.jpg

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引用本文的文献

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本文引用的文献

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Nanometric Cutting of Silicon with an Amorphous-Crystalline Layered Structure: A Molecular Dynamics Study.具有非晶-晶体层状结构的硅的纳米切削:一项分子动力学研究
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Overview of Probe-based Storage Technologies.基于探针的存储技术概述。
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