Nano Lab, Department of Electrical and Computer Engineering, Tufts University, Medford, MA-02155, USA.
Sci Rep. 2017 Jan 19;7:40933. doi: 10.1038/srep40933.
This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies.
本文提出了一种能在千兆赫兹速率下对太赫兹宽带电磁波进行振幅调制和开关切换的片上器件。该器件的工作原理基于限制在新型槽波导中的太赫兹波与二维电子气(2DEG)的相互作用,通过控制太赫兹波在波导中传播的损耗来实现。制作了一个原型器件,在 0.25 THz 载波频率下,其太赫兹强度调制达到 96%,插入损耗低,器件长度仅为 100 微米。所演示的调制截止频率超过 14 GHz,表明该器件有望实现太赫兹波的高速调制。整个器件在室温下工作,驱动电压低(<2 V),零直流功耗。该器件结构有望实现太赫兹频率下一代片上调制器和开关。