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半导体 WTe 超薄片中的磁阻和 Hall 电阻率。

Magnetoresistance and Hall resistivity of semimetal WTe ultrathin flakes.

机构信息

Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, People's Republic of China.

出版信息

Nanotechnology. 2017 Apr 7;28(14):145704. doi: 10.1088/1361-6528/aa5abc. Epub 2017 Jan 19.

Abstract

This article reports the characterization of WTe thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe thin films.

摘要

本文报道了 WTe 薄片磁阻和 Hall 电阻率的特性。我们发现,它在高磁场下并不表现出磁阻饱和,这与它们的体特性相似。我们器件中的 Hall 电阻率的线性度证实了电子和空穴的补偿。通过将实验结果与经典的双带模型相关联,证明了我们样品中较低的磁阻值是由载流子迁移率降低引起的。迁移率对温度的依赖性表明,在高温下,光学声子散射起着主要作用。我们的结果为 WTe 薄膜中的载流子行为和散射机制提供了更详细的信息。

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