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二维 ReSSe 合金的各向异性光谱和扭曲 1T 结构的电学性质

Anisotropic Spectroscopy and Electrical Properties of 2D ReS Se Alloys with Distorted 1T Structure.

机构信息

CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.

University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

出版信息

Small. 2017 Mar;13(12). doi: 10.1002/smll.201603788. Epub 2017 Jan 23.

Abstract

2D black phosphorus (BP) and rhenium dichalcogenides (ReX , X = S, Se) possess intrinsic in-plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired their novel applications in electronics, photonics, and optoelectronics. Different from BP with poor environmental stability, ReX has low-symmetry distorted 1T structures with excellent stability. In ReX , the electronic structure is weakly dependent on layer numbers, which restricts their property tunability and device applications. Here, the properties are tuned, such as optical bandgap, Raman anisotropy, and electrical transport, by alloying 2D ReS and ReSe . Photoluminescence emission energy of ReS Se monolayers (x from 0 to 1 with a step of 0.1) can be continuously tuned ranging from 1.62 to 1.31 eV. Polarization behavior of Raman modes, such as ReS -like peak at 212 cm , shifts as the composition changes. Anisotropic electrical property is maintained in ReS Se with high electron mobility along b-axis for all compositions of ReS Se .

摘要

二维黑磷(BP)和铼二卤代物(ReX,X=S,Se)具有源自其低晶体晶格对称性的固有面内各向异性物理性质,这激发了它们在电子学、光子学和光电子学中的新应用。与环境稳定性差的 BP 不同,ReX 具有低对称扭曲的 1T 结构,具有优异的稳定性。在 ReX 中,电子结构对层数的依赖性较弱,这限制了它们的性能可调性和器件应用。在这里,通过合金化二维 ReS 和 ReSe 来调谐其性能,例如光学带隙、拉曼各向异性和电输运。ReSSe 单层(x 从 0 到 1,步长为 0.1)的光致发光发射能量可以从 1.62 eV 连续调谐到 1.31 eV。拉曼模式的偏振行为,例如在 212cm 处的 ReS 样峰,随着组成的变化而移动。在 ReSSe 中,各向异性的电学性质得以保持,所有 ReSSe 组成的 b 轴方向的电子迁移率都很高。

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