Zhao Minghao, Yu Junsheng, Fu Lijuan, Guan Youwei, Tang Hua, Li Lu, Cheng Jiang
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Chongqing University of Arts and Sciences, Chongqing 402160, China.
Nanomaterials (Basel). 2021 Nov 9;11(11):3005. doi: 10.3390/nano11113005.
Copper antimony sulfide (CuSbS) has attracted significant interest as an earth-abundant photovoltaic absorber. However, the efficiency of the current CuSbS photovoltaic device is too low to meet the requirement of a large-scale application. In this study, selenylation was introduced to optimize the band structure and improve the device performance. Selenized CuSbS [CuSbS(Se)] films were realized using porous CuSbS films prepared by spray deposition with a post-treatment in Se vapor. The as-prepared CuSbS(Se) films exhibited a compact structure. X-ray diffraction and elemental analysis confirmed the effective doping of Se into the lattice by substituting a part of S in CuSbS. Elemental analysis revealed a gradient distribution for Se from the top surface to the deeper regions, and the substitution rate was very high (>39%). Dark J-V characteristics and AC impedance spectroscopy analysis showed that selenylation significantly reduced the carrier recombination center. As a result, the selenized CuSbS device exhibited a significant efficiency improvement from 0.12% to 0.90%, which is much higher than that of the simply annealed device (0.46%), indicating this technique is a promising approach to improve the performance of CuSbS solar cells.
硫化铜锑（CuSbS）作为一种储量丰富的光伏吸收剂引起了广泛关注。然而，目前的CuSbS光电器件效率过低，无法满足大规模应用的需求。在本研究中，引入硒化来优化能带结构并提高器件性能。通过喷雾沉积制备多孔CuSbS薄膜，并在硒蒸气中进行后处理，从而实现了硒化CuSbS [CuSbS(Se)] 薄膜。所制备的CuSbS(Se)薄膜呈现出致密的结构。X射线衍射和元素分析证实，通过取代CuSbS中的部分S，Se有效地掺杂进了晶格。元素分析表明，从薄膜表面到较深区域，Se呈现出梯度分布，且取代率非常高（>39%）。暗态电流-电压（J-V）特性和交流阻抗谱分析表明，硒化显著减少了载流子复合中心。结果，硒化CuSbS器件的效率从仅经过退火处理的器件的0.12%显著提高到了0.90%，远高于仅经过退火处理的器件（0.46%），这表明该技术是提高CuSbS太阳能电池性能的一种有前景的方法。
