National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Faculty of Pure and Applied Sciences, University of Tsukuba , 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan.
ACS Appl Mater Interfaces. 2017 Feb 22;9(7):6237-6245. doi: 10.1021/acsami.6b15398. Epub 2017 Feb 8.
Surface hydrophobization by self-assembled monolayer formation is a powerful technique for improving the performance of organic field-effect transistors (OFETs). However, organic thin-film formation on such a surface by solution processing often fails due to the repellent property of the surface against common organic solvents. Here, a scalable unidirectional coating technique that can solve this problem, named self-assisted flow-coating, is reported. Producing a specially designed lyophobic-lyophilic pattern on the lyophobic surface enables organic thin-film formation in the lyophobic surface areas by flow-coating. To demonstrate the usefulness of this technique, OFET arrays with an active layer of poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) are fabricated. The ideal transfer curves without hysteresis behavior are obtained for all OFETs. The average field-effect hole mobility in the saturation regime is 0.273 and 0.221 cm·V·s for the OFETs with the channels parallel and perpendicular to the flow-coating direction, respectively, and the device-to-device variation is less than 3% for each OFET set. Very small device-to-device variation is also obtained for the on-state current, threshold voltage, and subthreshold swing. These results indicate that the self-assisted flow-coating is a promising coating technique to form spatially uniform thin films of polymeric organic semiconductors on lyophobic gate insulator surfaces.
通过自组装单分子层的形成实现表面疏水性化是提高有机场效应晶体管(OFET)性能的一种有效技术。然而,由于表面对常见有机溶剂的排斥特性,通过溶液处理在这种表面上形成有机薄膜往往会失败。在这里,报道了一种可解决此问题的可扩展单向涂层技术,称为自辅助流涂。在疏液表面上生成专门设计的疏-亲图案,可通过流涂在疏液表面区域形成有机薄膜。为了证明该技术的有用性,制备了具有聚(2,5-双(3-己基噻吩-2-基)噻吩[3,2-b]噻吩)活性层的 OFET 阵列。所有 OFET 都获得了没有滞后行为的理想转移曲线。在饱和区的平均场效应空穴迁移率对于平行和垂直于流涂方向的通道分别为 0.273 和 0.221 cm·V·s,每个 OFET 组的器件间变化小于 3%。对于导通电流、阈值电压和亚阈值摆幅,也获得了非常小的器件间变化。这些结果表明,自辅助流涂是在疏液栅极绝缘体表面上形成空间均匀的聚合物有机半导体薄膜的一种很有前途的涂层技术。