Kim Kyunghun, Hong Jisu, Hahm Suk Gyu, Rho Yecheol, An Tae Kyu, Kim Se Hyun, Park Chan Eon
Department of Chemical Engineering , Pohang University of Science and Technology , Pohang 790-784 , Korea.
Materials Research Center , Samsung Advanced Institute of Technology , Suwon 443-803 , Korea.
ACS Appl Mater Interfaces. 2019 Apr 10;11(14):13481-13490. doi: 10.1021/acsami.8b21130. Epub 2019 Mar 27.
The ability to fabricate uniform and high-quality patterns of organic semiconductors using a simple method is necessary to realize high-performance and reliable organic field-effect transistors (OFETs) for practical applications. Here, we report the facile fabrication of chemically patterned substrates in order to provide solvent wetting/dewetting regions and grow patterned crystals during blade coating of a small-molecule semiconductor/insulating polymer blend solution. Polyurethane acrylate is selected as the solvent dewetting material, not only because of its hydrophobicity but also because its patterns are easily produced by selective UV irradiation onto precursor films. 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) crystal patterns are grown on the line-shaped wetting regions of the patterned film, and the crystallinity of TIPS-PEN and alignment of molecules are found using various crystal analysis tools depending on the pattern widths. The smallest width of 5 μm yielded an OFET showing the highest field-effect mobility value of 1.63 cm/(V·s), which is much higher than the value of the OFET based on the unpatterned TIPS-PEN crystal. Notably, we demonstrate flexible and low-voltage-operating OFETs for practical use of the patterned crystals, and the OFETs show highly stable operation under sustained gate bias stress thanks to the patterned crystals.
为了实现用于实际应用的高性能且可靠的有机场效应晶体管(OFET),采用简单方法制造均匀且高质量的有机半导体图案的能力是必要的。在此,我们报告了一种简便的化学图案化衬底的制造方法,以便提供溶剂润湿性/去润湿性区域,并在小分子半导体/绝缘聚合物共混溶液的刮涂过程中生长图案化晶体。选择聚氨酯丙烯酸酯作为溶剂去润湿性材料,不仅是因为其疏水性,还因为其图案可通过对前驱体膜进行选择性紫外线照射轻松产生。6,13-双(三异丙基硅乙炔基)并五苯(TIPS-PEN)晶体图案在图案化膜的线状润湿区域上生长,并且根据图案宽度使用各种晶体分析工具来研究TIPS-PEN的结晶度和分子排列。最小宽度为5μm的图案化OFET显示出最高场效应迁移率值为1.63 cm²/(V·s),这远高于基于未图案化TIPS-PEN晶体的OFET的值。值得注意的是,我们展示了用于图案化晶体实际应用的柔性且低电压操作的OFET,并且由于图案化晶体,这些OFET在持续栅极偏置应力下显示出高度稳定的操作。