BASF Electronic Materials R&D Center Asia, Suwon, 16419, Republic of Korea.
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Sci Rep. 2017 Jan 27;7:41336. doi: 10.1038/srep41336.
There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin AlO film (around 5.3 nm) via low-temperature (100 °C) atomic layer deposition. The AlO-encapsulated Ag nanowire (AlO/Ag) electrodes are stable even after annealing at 380 °C for 100 min and maintain their electrical and optical properties. The AlO encapsulation layer also effectively blocks the permeation of HO molecules and thereby enhances the ambient stability to greater than 1,080 h in an atmosphere with a relative humidity of 85% at 85 °C. Results from the cyclic bending test of up to 500,000 cycles (under an effective strain of 2.5%) confirm that the AlO/Ag nanowire electrode has a superior mechanical reliability to that of the conventional indium tin oxide film electrode. Moreover, the AlO encapsulation significantly improves the mechanical durability of the Ag nanowire electrode, as confirmed by performing wiping tests using isopropyl alcohol.
在柔性电子产品行业中,人们对能够承受高温和腐蚀性环境的高度耐用的柔性/透明导体的需求日益增长。在这项工作中,通过低温(100°C)原子层沉积,用一层超薄的 AlO 薄膜(约 5.3nm)对具有低电阻率的高度透明 Ag 纳米线电极进行封装,从而展示了其出色的热稳定性和环境稳定性。即使在 380°C 下退火 100 分钟后,AlO 封装的 Ag 纳米线(AlO/Ag)电极仍然稳定,并保持其电性能和光学性能。AlO 封装层还能有效阻止 HO 分子的渗透,从而将环境稳定性提高到在 85°C 下相对湿度为 85%的环境中大于 1080 小时。高达 500,000 次循环(有效应变为 2.5%)的循环弯曲测试结果证实,与传统的铟锡氧化物薄膜电极相比,AlO/Ag 纳米线电极具有更高的机械可靠性。此外,AlO 封装显著提高了 Ag 纳米线电极的机械耐久性,这一点通过使用异丙醇进行擦拭测试得到了证实。