Im Hyeon-Gyun, Jang Junho, Jeon Yeonjee, Noh Jonghyeon, Jin Jungho, Lee Jung-Yong, Bae Byeong-Soo
Electrical Materials Research Division, Korea Electrotechnology Research Institute (KERI), Changwon-si 51543, Republic of Korea.
Wearable Platform Materials Technology Center (WMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
ACS Appl Mater Interfaces. 2020 Dec 16;12(50):56462-56469. doi: 10.1021/acsami.0c17130. Epub 2020 Dec 1.
Metal nanowires (NWs) are promising transparent conducting electrode (TCE) materials because of their excellent optoelectrical performance, intrinsic mechanical flexibility, and large-scale processability. However, the surface roughness, thermal/chemical instability, and limited electrical conductivity associated with empty spaces between metal NWs are problems that are yet to be solved. Here, we report a highly reliable and robust composite TCE/substrate all-in-one platform that consists of crystalline indium tin oxide (c-ITO) top layer and surface-embedded metal NW (c-ITO/AgNW-GFRH) films for flexible optoelectronics. The c-ITO top layer (thickness: 10-30 nm) greatly improves the electrical performance of a AgNW-based electrode, retaining its transparency even after a high-temperature annealing process at 250 °C because of its thermally stable basal substrate (i.e., AgNW-GFRH). By introducing c-ITO thin film, we achieve an extremely smooth surface ( < 1 nm), excellent optoelectrical performance, superior thermal (> 250 °C)/chemical stability (in sulfur-contained solution), and outstanding mechanical flexibility (bending radius = 1 mm). As a demonstration, we fabricate flexible organic devices (organic photovoltaic and organic light-emitting diode) on c-ITO/AgNW-GFRH films that show device performance comparable to that of references ITO/glass substrates and superior mechanical flexibility. With excellent stability and demonstrations, we expect that the c-ITO/AgNW-GFRHs can be used as flexible TCE/substrate films for future thin-film optoelectronics.
金属纳米线(NWs)因其优异的光电性能、固有的机械柔韧性和大规模可加工性,而成为很有前景的透明导电电极(TCE)材料。然而,与金属纳米线之间的空隙相关的表面粗糙度、热/化学不稳定性以及有限的电导率,仍是有待解决的问题。在此,我们报道了一种高度可靠且坚固的复合TCE/衬底一体化平台,它由结晶铟锡氧化物(c-ITO)顶层和表面嵌入金属纳米线(c-ITO/AgNW-GFRH)薄膜组成,用于柔性光电子学。c-ITO顶层(厚度:10 - 30纳米)极大地改善了基于银纳米线的电极的电学性能,由于其热稳定的基底衬底(即AgNW-GFRH),即使在250℃的高温退火处理后仍能保持其透明度不变。通过引入c-ITO薄膜,我们实现了极其光滑的表面(<1纳米)、优异的光电性能、卓越的热稳定性(>250℃)/化学稳定性(在含硫溶液中)以及出色的机械柔韧性(弯曲半径 = 1毫米)。作为例证,我们在c-ITO/AgNW-GFRH薄膜上制备了柔性有机器件(有机光伏器件和有机发光二极管),其器件性能与参考ITO/玻璃衬底相当,且具有卓越的机械柔韧性。凭借出色的稳定性和例证,我们预计c-ITO/AgNW-GFRH可作为未来薄膜光电子学的柔性TCE/衬底薄膜使用。