School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, Republic of Korea.
Nanotechnology. 2017 Mar 3;28(9):095207. doi: 10.1088/1361-6528/aa57b1.
We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnN bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.
我们研究了水吸收对高迁移率锌氧氮化物（ZnON）薄膜晶体管（TFT）电性能和稳定性的影响。ZnON TFT 在暴露于水后，在正栅偏压应力下，表现出较小的场效应迁移率、较低的导通电压和较高的亚阈值斜率，以及较差的电稳定性。从霍尔测量结果可以看出，ZnON 薄膜在水吸收后，电子浓度增加，霍尔迁移率降低。基于 X 射线光电子能谱分析，观察到的现象主要归因于水分子诱导的 ZnON 薄膜中缺陷 ZnN 键和氧空位的增加。
