首个具有10元LiS环且展现出优异非线性光学性能的季铵类类金刚石半导体。
The first quaternary diamond-like semiconductor with 10-membered LiS rings exhibiting excellent nonlinear optical performances.
作者信息
Wu Kui, Yang Zhihua, Pan Shilie
机构信息
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011, China.
出版信息
Chem Commun (Camb). 2017 Mar 9;53(21):3010-3013. doi: 10.1039/c6cc09565h.
A new diamond-like semiconductor (DLS), LiHgGeS, is the first example exhibiting unusual 10-membered LiS rings in the reported quaternary sulfide DLSs. Remarkably, LiHgGeS exhibits excellent performances with concurrently large NLO coefficients and impressive LDT, which satisfy the essential requirements of IR NLO candidates.
一种新型类金刚石半导体（DLS），LiHgGeS，是报道的四元硫化物类金刚石半导体中首个呈现出异常的十元LiS环的例子。值得注意的是，LiHgGeS展现出优异的性能，同时具有大的非线性光学（NLO）系数和令人印象深刻的激光损伤阈值（LDT），满足红外非线性光学候选材料的基本要求。
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