CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS; Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China.
Dalton Trans. 2019 Apr 2;48(14):4484-4488. doi: 10.1039/c9dt00269c.
Herein, a promising infrared nonlinear optical (IR NLO) material, Li2ZnGeS4, was successfully synthesized in the typical quaternary diamond-like semiconductor (DLS) system. This material exhibits excellent performances including a wide band gap (3.49 eV), a high laser-damage threshold (LDT, 8 × benchmark AgGaS2), and a good NLO effect (0.7 × AgGaS2) with phase-matching behavior. Furthermore, based on first principles calculations, the theoretical results are in agreement with the experimental results.
在此,我们成功合成了一种有前途的红外非线性光学(IR NLO)材料 Li2ZnGeS4,它在典型的类似金刚石的半导体(DLS)体系中表现出优异的性能,包括宽的带隙(3.49 eV)、高的激光损伤阈值(LDT,8×基准 AgGaS2)和良好的 NLO 效应(0.7×AgGaS2),具有相位匹配行为。此外,基于第一性原理计算,理论结果与实验结果一致。