CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS; Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China.
Dalton Trans. 2019 Apr 2;48(14):4484-4488. doi: 10.1039/c9dt00269c.
Herein, a promising infrared nonlinear optical (IR NLO) material, Li2ZnGeS4, was successfully synthesized in the typical quaternary diamond-like semiconductor (DLS) system. This material exhibits excellent performances including a wide band gap (3.49 eV), a high laser-damage threshold (LDT, 8 × benchmark AgGaS2), and a good NLO effect (0.7 × AgGaS2) with phase-matching behavior. Furthermore, based on first principles calculations, the theoretical results are in agreement with the experimental results.
在此，我们成功合成了一种有前途的红外非线性光学（IR NLO）材料 Li2ZnGeS4，它在典型的类似金刚石的半导体（DLS）体系中表现出优异的性能，包括宽的带隙（3.49 eV）、高的激光损伤阈值（LDT，8×基准 AgGaS2）和良好的 NLO 效应（0.7×AgGaS2），具有相位匹配行为。此外，基于第一性原理计算，理论结果与实验结果一致。
