Department of Chemistry, Stanford University , Stanford, California 94305, United States.
The Molecular Foundry, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
J Am Chem Soc. 2017 Mar 1;139(8):3275-3282. doi: 10.1021/jacs.7b00223. Epub 2017 Feb 17.
Luminescence quenching at high dopant concentrations generally limits the dopant concentration to less than 1-5 mol% in lanthanide-doped materials, and this remains a major obstacle in designing materials with enhanced efficiency/brightness. In this work, we provide direct evidence that the major quenching process at high dopant concentrations is the energy migration to the surface (i.e., surface quenching) as opposed to the common misconception of cross-relaxation between dopant ions. We show that after an inert epitaxial shell growth, erbium (Er) concentrations as high as 100 mol% in NaY(Er)F/NaLuF core/shell nanocrystals enhance the emission intensity of both upconversion and downshifted luminescence across different excitation wavelengths (980, 800, and 658 nm), with negligible concentration quenching effects. Our results highlight the strong coupling of concentration and surface quenching effects in colloidal lanthanide-doped nanocrystals, and that inert epitaxial shell growth can overcome concentration quenching. These fundamental insights into the photophysical processes in heavily doped nanocrystals will give rise to enhanced properties not previously thought possible with compositions optimized in bulk.
在高掺杂浓度下,荧光猝灭通常将掺杂浓度限制在镧系掺杂材料的 1-5 摩尔%以下,这仍然是设计高效率/高亮度材料的主要障碍。在这项工作中,我们提供了直接证据,表明在高掺杂浓度下主要的猝灭过程是能量迁移到表面(即表面猝灭),而不是常见的掺杂离子之间的交叉弛豫的误解。我们表明,在惰性外延壳生长之后,高达 100 摩尔%的铒(Er)在 NaY(Er)F/NaLuF 核/壳纳米晶体中的浓度增强了上转换和下转换发光的发射强度,跨越不同的激发波长(980、800 和 658nm),几乎没有浓度猝灭效应。我们的结果强调了胶体镧系掺杂纳米晶体中浓度和表面猝灭效应的强耦合,以及惰性外延壳生长可以克服浓度猝灭。这些对重掺杂纳米晶体中光物理过程的基本见解将导致增强的性能,这是以前在体优化组成时不可能想到的。