Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China.
Nanoscale. 2017 Feb 16;9(7):2449-2456. doi: 10.1039/c6nr09241a.
A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS nanosheets (MoS-PVK) was fabricated with the configuration of Au/MoS-PVK/ITO. This is the first example of polymer covalently modified MoS nanosheet-based memory devices. As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory, with a turn-on voltage of -1.54 V and an ON/OFF current ratio of 4 × 10. After annealing at 80 °C for 1 h under a nitrogen atmosphere, a high ON/OFF current ratio (up to 3 × 10) and a lower turn-on voltage (-1.31 V), which are among the best reported for MoS-based polymer/organic memory devices, were achieved due to enhanced crystallization of PVK, which induced a more efficient intramolecular charge transfer effect between PVK and MoS during the annealing process. The effect of film thickness on the current-voltage characteristics of the MoS-PVK-based devices and the memory performance of the MoS/PVK blends-based devices have also been explored.
一种基于可溶性聚（N-乙烯基咔唑）-化学改性 MoS 纳米片（MoS-PVK）的新型非易失性可重写存储器件采用 Au/MoS-PVK/ITO 的结构制备。这是首例聚合物共价修饰 MoS 纳米片基存储器件的报道。正如预期的那样，该器件表现出典型的非易失性可重写存储性能，开启电压为-1.54 V，ON/OFF 电流比为 4×10。在氮气气氛下 80°C 退火 1 h 后，由于 PVK 的结晶增强，实现了更高的 ON/OFF 电流比（高达 3×10）和更低的开启电压（-1.31 V），这是报道的基于 MoS 的聚合物/有机存储器件中最好的结果之一，这归因于在退火过程中 PVK 和 MoS 之间更有效的分子内电荷转移效应。还探索了 MoS-PVK 基器件的薄膜厚度对电流-电压特性的影响以及 MoS/PVK 共混物基器件的存储性能。
