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制备 MoS₂-聚乙烯吡咯烷酮纳米复合材料,用于具有还原氧化石墨烯电极的柔性非易失性可重写存储器件。

Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes.

机构信息

School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore, Website: http://www.ntu.edu.sg/home/hzhang/

出版信息

Small. 2012 Nov 19;8(22):3517-22. doi: 10.1002/smll.201200999. Epub 2012 Aug 9.

Abstract

A facile method for exfoliation and dispersion of molybdenum disulfide (MoS2) with the aid of polyvinylpyrrolidone (PVP) is proposed. The resultant PVP-coated MoS2 nanosheets, i.e., MoS2-PVP nanocomposites, are well dispersed in the low-boiling ethanol solvent, facilitating their thin film preparation and the device fabrication by solution processing technique. As a proof of concept, a flexible memory diode with the configuration of reduced graphene oxide (rGO)/MoS2-PVP/Al exhibited a typical bistable electrical switching and nonvolatile rewritable memory effect with the function of flash. These experimental results prove that the electrical transition is due to the charge trapping and detrapping behavior of MoS2 in the PVP dielectric material. This study paves a way of employing two-dimensional nanomaterials as both functional materials and conducting electrodes for the future flexible data storage.

摘要

提出了一种利用聚乙烯吡咯烷酮(PVP)剥离和分散二硫化钼(MoS2)的简便方法。所得的 PVP 包覆的 MoS2 纳米片,即 MoS2-PVP 纳米复合材料,在低沸点乙醇溶剂中良好分散,便于通过溶液处理技术制备薄膜和器件。作为概念验证,具有还原氧化石墨烯(rGO)/MoS2-PVP/Al 结构的柔性记忆二极管表现出典型的双稳定电开关和非易失性可重写存储效应,具有闪存功能。这些实验结果证明,电跃迁是由于 MoS2 在 PVP 介电材料中的电荷俘获和释放行为。这项研究为未来的柔性数据存储开辟了一条将二维纳米材料用作功能材料和导电电极的途径。

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