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氧化还原门控聚合物忆阻处理存储单元。

Redox gated polymer memristive processing memory unit.

机构信息

Key Laboratory for Advanced Materials, Institute of Applied Chemistry, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China.

School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.

出版信息

Nat Commun. 2019 Feb 13;10(1):736. doi: 10.1038/s41467-019-08642-y.

DOI:10.1038/s41467-019-08642-y
PMID:30760719
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6374435/
Abstract

Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore's Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a high-performance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.

摘要

具有巨大存储容量和卓越处理效率的忆阻器对于克服大数据和人工智能时代的摩尔定律限制和冯·诺依曼瓶颈问题至关重要。特别是,将多功能集成到单个忆阻器中,有望成为获得高性能电子设备的重要策略,以满足当今对数据存储和处理日益增长的需求。在本研究中,我们报告了一个概念验证聚合物忆阻处理-存储单元,展示了可编程信息存储和处理能力。通过将三苯胺和二茂铁的氧化还原活性部分引入芴骨架的侧链上,该共轭聚合物表现出三重氧化行为和有趣的忆阻开关特性。与独特的电化学和电气行为相关联,聚合物器件能够执行多级存储、加、减、乘、除十进制算术运算以及简单的布尔逻辑运算。

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Memristors with Biomaterials for Biorealistic Neuromorphic Applications.用于生物逼真神经形态应用的含生物材料忆阻器。

本文引用的文献

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