Porrazzo Rossella, Luzio Alessandro, Bellani Sebastiano, Bonacchini Giorgio Ernesto, Noh Yong-Young, Kim Yun-Hi, Lanzani Guglielmo, Antognazza Maria Rosa, Caironi Mario
Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milan, Italy; Dipartimento di Fisica, Politecnico di Milano, P.zza L. da Vinci 32, 20133 Milan, Italy.
Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia , Via Pascoli 70/3, 20133 Milan, Italy.
ACS Omega. 2017 Jan 31;2(1):1-10. doi: 10.1021/acsomega.6b00256. Epub 2017 Jan 3.
The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm in full accumulation and a mobility-capacitance product of 7 × 10 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.
本文报道了首个n型水门控有机场效应晶体管(WGOFET),以及简单的水门控互补集成电路,其形式为反相逻辑门。对于n型WGOFET有源层,已对包括萘二亚胺共聚物和可溶性富勒烯衍生物在内的高电子亲和性有机半导体进行了比较,后者在完全积累时能够实现1 μF/cm范围内的高双电层电容以及7×10 μF/V s的迁移率-电容乘积。短期稳定性测量表明,尽管该器件在通常被认为恶劣的环境中运行,特别是对于电子传输有机分子而言,但仍具有良好的循环稳健性。这项工作为在水性环境中进行信号调节和驱动的先进电路设计铺平了道路,并为实现用于生物传感和神经调节的有源生物有机界面开辟了新的前景。