State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, Guangdong 510275, P. R. China.
ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7288-7296. doi: 10.1021/acsami.6b16323. Epub 2017 Feb 16.
Layered materials have been found to be promising candidates for next-generation microelectronic and optoelectronic devices due to their unique electrical and optical properties. The p-n junction is an elementary building block for microelectronics and optoelectronics devices. Herein, using the pulsed-laser deposition (PLD) method, we achieve pure InSe-based photodetectors and InSe/CuInSe-based photodetectors with a lateral p-n heterojunction. In comparison to that of the pure InSe-based photodetector, the photodetectors based on the InSe/CuInSe heterojunction exhibit a tremendous promotion of photodetection performance and obvious rectifying behavior. The photoresponsivity and external quantum efficiency of the fabricated heterojunction-based device under 532 nm light irradiation are 20.1 A/W and 4698%, respectively. These values are about 7.5 times higher than those of our fabricated pure InSe-based devices. We attribute this promotion of photodetection to the suitable band structures of InSe and CuInSe, which greatly promote the separation of photoexcited electron-hole pairs. This work suggests an effective way to form lateral p-n junctions, opening up a new scenario for designing and constructing high-performance optoelectronic devices.
层状材料由于其独特的电学和光学性能，被认为是下一代微电子和光电子器件的有前途的候选材料。p-n 结是微电子和光电子器件的基本组成部分。在此，我们使用脉冲激光沉积（PLD）方法，实现了具有横向 p-n 异质结的纯 InSe 基光电探测器和 InSe/CuInSe 基光电探测器。与纯 InSe 基光电探测器相比，基于 InSe/CuInSe 异质结的光电探测器表现出对光电探测性能的巨大提升和明显的整流行为。在 532nm 光照射下，所制备的基于异质结器件的光响应率和外量子效率分别为 20.1A/W 和 4698%。这些值分别约为我们制备的纯 InSe 基器件的 7.5 倍。我们将这种光电探测性能的提升归因于 InSe 和 CuInSe 的合适能带结构，这极大地促进了光生电子-空穴对的分离。这项工作为形成横向 p-n 结提供了一种有效的方法，为设计和构建高性能光电子器件开辟了新的前景。
