High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional InSe nanosheets.

Two-dimensional (2D) InSe with unique optical and electrical properties has great potential in next generation optoelectronics and multilevel phase-change memories. Here, for the first time, we report high-performance rigid and flexible photodetectors based on chemical vapor deposition (CVD) grown 2D InSe. Both rigid and flexible 2D InSe photodetectors show a broadband response range from ultraviolet (254 nm) to visible light (700 nm). High photoresponsivities of 578 and 363 A · W are achieved using rigid and flexible 2D InSe photodetectors, respectively, under 700 nm light illumination, which are higher than those of photodetectors based on mechanically exfoliated 2D InSe and physical vapor deposition grown 2D InSe. Furthermore, flexible 2D InSe photodetectors show good mechanical durability and photoresponse stability under repeated bending tests. A high and stable photoresponse provides an opportunity for CVD-grown 2D InSe applications in flexible optoelectronic and photovoltaic devices.