Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan.
Department of Physics, University of South Africa, Florida Science Campus-1710, Johannesburg, South Africa.
Sci Rep. 2017 Feb 10;7:42235. doi: 10.1038/srep42235.
Nitrogen-doped graphene oxides (GO:N) were synthesized by a partial reduction of graphene oxide (GO) using urea [CO(NH)]. Their electronic/bonding structures were investigated using X-ray absorption near-edge structure (XANES), valence-band photoemission spectroscopy (VB-PES), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS). During GO:N synthesis, different nitrogen-bonding species, such as pyrrolic/graphitic-nitrogen, were formed by replacing of oxygen-containing functional groups. At lower N-content (2.7 at%), pyrrolic-N, owing to surface and subsurface diffusion of C, N and NH is deduced from various X-ray spectroscopies. In contrast, at higher N-content (5.0 at%) graphitic nitrogen was formed in which each N-atom trigonally bonds to three distinct sp-hybridized carbons with substitution of the N-atoms for C atoms in the graphite layer. Upon nitrogen substitution, the total density of state close to Fermi level is increased to raise the valence-band maximum, as revealed by VB-PES spectra, indicating an electron donation from nitrogen, molecular bonding C/N/O coordination or/and lattice structure reorganization in GO:N. The well-ordered chemical environments induced by nitrogen dopant are revealed by XANES and RIXS measurements.
氮掺杂氧化石墨烯(GO:N)是通过使用尿素[CO(NH)]部分还原氧化石墨烯(GO)合成的。使用 X 射线吸收近边结构(XANES)、价带光电子能谱(VB-PES)、X 射线发射光谱(XES)和共振非弹性 X 射线散射(RIXS)研究了它们的电子/键结构。在 GO:N 合成过程中,通过取代含氧官能团,形成了不同的含氮键合物种,如吡咯/石墨氮。在较低的氮含量(2.7at%)下,由于 C、N 和 NH 的表面和次表面扩散,推断出各种 X 射线光谱中的吡咯-N。相比之下,在较高的氮含量(5.0at%)下,形成了石墨氮,其中每个 N 原子与三个独特的 sp 杂化碳以三角键合,N 原子取代了石墨层中的 C 原子。通过氮取代,费米能级附近的总态密度增加,价带最大值提高,如 VB-PES 光谱所示,这表明氮从分子键 C/N/O 配位或/和晶格结构重排中提供电子。XANES 和 RIXS 测量揭示了氮掺杂剂引起的有序化学环境。