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大面积物理气相沉积单层和双层二硫化钼的光敏性。

Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS.

作者信息

Wang Baoming, Muratore Christopher, Voevodin Andrey A, Haque Md Amanul

机构信息

Mechanical & Nuclear Engineering, the Pennsylvania State University, University Park, PA 16802 USA.

Chemical & Materials Engineering, University of Dayton, Dayton, OH 45469 USA.

出版信息

Nano Converg. 2014;1(1):22. doi: 10.1186/s40580-014-0022-6. Epub 2014 Aug 9.

DOI:10.1186/s40580-014-0022-6
PMID:28191402
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5270997/
Abstract

We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS films. Photo-voltaic effect was observed in single layer MoS without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS photo device with performance comparable to their exfoliated counterparts.

摘要

我们展示了大面积物理气相沉积的单层和双层MoS薄膜中的光敏性。在没有任何明显整流结的单层MoS中观察到了光伏效应,这使得器件制造变得简单直接。对于双层膜,不存在这种效应,这表明在光与物质相互作用中存在强烈的尺寸效应。观察到光伏效应在薄膜平面内高度依赖于方向,这表明倾斜沉积配置在形成整流电位梯度中起着关键作用。据我们所知,这是第一篇关于任何大面积且无需转移的MoS光电器件的报告,其性能与通过剥离法制备的同类器件相当。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c49/5270997/25c8a46a931f/40580_2014_22_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c49/5270997/233e514a206d/40580_2014_22_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c49/5270997/25c8a46a931f/40580_2014_22_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c49/5270997/233e514a206d/40580_2014_22_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c49/5270997/25c8a46a931f/40580_2014_22_Fig2_HTML.jpg

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