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基于Ti/HfO/ZrO/Pt的双层电阻式随机存取存储器的优化

Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO/ZrO/Pt.

作者信息

Sun Zhendong, Wang Pengfei, Li Xuemei, Chen Lijia, Yang Ying, Wang Chunxia

机构信息

College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.

Analog Foundries Co., Ltd., Chongqing 401332, China.

出版信息

Materials (Basel). 2024 Apr 17;17(8):1852. doi: 10.3390/ma17081852.

DOI:10.3390/ma17081852
PMID:38673209
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11051404/
Abstract

In this paper, the electrothermal coupling model of metal oxide resistive random access memory (RRAM) is analyzed by using a 2D axisymmetrical structure in COMSOL Multiphysics simulation software. The RRAM structure is a Ti/HfO/ZrO/Pt bilayer structure, and the SET and RESET processes of Ti/HfO/ZrO/Pt are verified and analyzed. It is found that the width and thickness of CF1 (the conductive filament of the HfO layer), CF2 (the conductive filament of the ZrO layer), and resistive dielectric layers affect the electrical performance of the device. Under the condition of the width ratio of conductive filament to transition layer (6:14) and the thickness ratio of HfO to ZrO (7.5:7.5), Ti/HfO/ZrO/Pt has stable high and low resistance states. On this basis, the comparison of three commonly used RRAM metal top electrode materials (Ti, Pt, and Al) shows that the resistance switching ratio of the Ti electrode is the highest at about 11.67. Finally, combining the optimal conductive filament size and the optimal top electrode material, the I-V hysteresis loop was obtained, and the switching ratio R/R = 10.46 was calculated. Therefore, in this paper, a perfect RRAM model is established, the resistance mechanism is explained and analyzed, and the optimal geometrical size and electrode material for the hysteresis characteristics of the Ti/HfO/ZrO/Pt structure are found.

摘要

本文利用COMSOL Multiphysics模拟软件中的二维轴对称结构，对金属氧化物电阻式随机存取存储器（RRAM）的电热耦合模型进行了分析。RRAM结构为Ti/HfO/ZrO/Pt双层结构，对Ti/HfO/ZrO/Pt的SET和RESET过程进行了验证和分析。发现CF1（HfO层的导电细丝）、CF2（ZrO层的导电细丝）的宽度和厚度以及电阻介质层会影响器件的电学性能。在导电细丝与过渡层宽度比为6:14、HfO与ZrO厚度比为7.5:7.5的条件下，Ti/HfO/ZrO/Pt具有稳定的高阻态和低阻态。在此基础上，对三种常用的RRAM金属顶电极材料（Ti、Pt和Al）进行比较，结果表明Ti电极的电阻开关比最高，约为11.67。最后，结合最优的导电细丝尺寸和最优的顶电极材料，得到了I-V滞后回线，并计算出开关比R/R = 10.46。因此，本文建立了完善的RRAM模型，对电阻机制进行了解释和分析，并找到了Ti/HfO/ZrO/Pt结构滞后特性的最优几何尺寸和电极材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4d75/11051404/429772c12e3f/materials-17-01852-g011.jpg
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本文引用的文献

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Ferroelectric Orthorhombic ZrO Thin Films Achieved Through Nanosecond Laser Annealing.通过纳秒激光退火实现铁电正交相 ZrO 薄膜。
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