Department of WCU Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 500-712, South Korea.
Nanoscale. 2017 Oct 19;9(40):15314-15322. doi: 10.1039/c7nr01840a.
A resistive random access memory (RRAM) device with self-rectifying I-V characteristics was fabricated by inserting a silicon nitride (SiN) layer between the bottom electrode and solution-processed active material of an iron oxide-graphene oxide (FeO-GO) hybrid. The fabricated Au/Ni/FeO-GO/SiN/n-Si memory device exhibited an excellent resistive switching ratio and a rectification ratio higher than 10. In the Au/Ni/FeO-GO/SiN/n-Si device, resistive switching occurs in both the FeO-GO and SiN layers separately, resulting in a highly uniform and stable switching performance. The resistive switching from a high resistance state to a low resistance state in the Au/Ni/FeO-GO/SiN/n-Si device occurs through a trap-assisted tunneling process in the SiN layer, enabled by the FeO-GO layer which prevents diffusion of the migrating Ni metal into the switching nitride layer. The intrinsic self-rectifying characteristics of our memory devices arise from the asymmetric barriers for electrons tunneling into the traps of the SiN layer which is sandwiched between the top and bottom electrodes having dissimilar work functions. Our study confirmed that integrating a suitable dielectric layer into the conventional RRAM cell is an innovative strategy to simplify the architecture and fabrication process to realize self-rectifying crossbar arrays.
通过在底部电极和铁氧化物-石墨烯氧化物（FeO-GO）混合的溶液处理活性材料之间插入氮化硅（SiN）层，制造了具有自整流 I-V 特性的电阻式随机存取存储器（RRAM）器件。所制造的 Au/Ni/FeO-GO/SiN/n-Si 存储器器件表现出优异的电阻开关比和高于 10 的整流比。在 Au/Ni/FeO-GO/SiN/n-Si 器件中，电阻开关分别在 FeO-GO 和 SiN 层中发生，导致高度均匀和稳定的开关性能。Au/Ni/FeO-GO/SiN/n-Si 器件中从高电阻状态到低电阻状态的电阻开关通过 SiN 层中的陷阱辅助隧穿过程发生，这是由 FeO-GO 层实现的，该层防止迁移的 Ni 金属扩散到开关氮化物层中。我们的存储器器件的固有自整流特性源自夹在具有不同功函数的顶电极和底电极之间的 SiN 层中的陷阱的电子隧穿的不对称势垒。我们的研究证实，将合适的介电层集成到传统的 RRAM 单元中是一种创新策略，可以简化架构和制造工艺，以实现自整流交叉点阵列。
