School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington 6021, New Zealand. The MacDiarmid Institute for Advanced Materials and Nanotechnology, New Zealand.
Nanotechnology. 2017 Mar 24;28(12):124003. doi: 10.1088/1361-6528/aa5e43. Epub 2017 Feb 23.
We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on-off ratios of 10 and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.
我们报告了使用原位生长的 ZnO 纳米线桥接预先图案化电极的低温制造场效应晶体管，这些晶体管无需进行生长后处理或退火即可工作。使用未经处理的纳米线，器件表现出良好的性能，开关比为 10，阈值电压为 2 V。电子显微镜显示，场依赖的纳米线从较大的 ZnO 纳米棒上分级形核，并且两者都沿共同的 c 轴取向。高的纳米线比表面积可以耗尽纳米线表面上的电子陷阱，从而补偿整个纳米线体中存在的本征电子供体。这消除了通过高温退火来降低电子浓度的需要，使得纳米线在其原始生长状态下自然地依赖于场。
