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使用非晶碳在铜上低温 PVD 合成石墨烯的生长机制。

Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon.

机构信息

Center for Reliability Sciences &Technologies, Chang Gung University, 259, Wen-Hwa 1st Road, Kwei-Shan, Taoyuan, 33302, ROC Taiwan.

Department of Electronic Engineering, Chang Gung University, 259, Wen-Hwa 1st Road, Kwei-Shan, Taoyuan, 33302, ROC Taiwan.

出版信息

Sci Rep. 2017 Mar 9;7:44112. doi: 10.1038/srep44112.

DOI:10.1038/srep44112
PMID:28276475
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5343459/
Abstract

Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

摘要

本工作研究了使用非晶态碳作为碳源，铜作为催化剂，合成 PVD 基石墨烯的生长机制。针对非晶态碳薄膜厚度、退火时间和温度等方面进行了不同的实验研究。研究发现，铜膜应力及其对氢通过膜晶界扩散的影响是生长机制的关键因素，并得到了我们的有限元建模的支持。实现了石墨烯的低温生长，并发现所提出的生长机制在低温下仍然有效。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee1f/5343459/b5951cd3095a/srep44112-f12.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee1f/5343459/0f5637049dc4/srep44112-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee1f/5343459/28ae8a4e6bae/srep44112-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee1f/5343459/09ec35a91c78/srep44112-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee1f/5343459/882a327659b8/srep44112-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee1f/5343459/2e9b954a123d/srep44112-f11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee1f/5343459/b5951cd3095a/srep44112-f12.jpg

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No Graphene Etching in Purified Hydrogen.在纯氢气中无石墨烯蚀刻。
J Phys Chem Lett. 2013 Apr 4;4(7):1100-3. doi: 10.1021/jz400400u. Epub 2013 Mar 21.
3
Realization of large-area wrinkle-free monolayer graphene films transferred to functional substrates.实现转移到功能衬底上的大面积无褶皱单层石墨烯薄膜
Sci Rep. 2015 Jun 5;5:9610. doi: 10.1038/srep09610.
4
Reducing contact resistance in graphene devices through contact area patterning.通过接触区域图案化来降低石墨烯器件的接触电阻。
ACS Nano. 2013 Apr 23;7(4):3661-7. doi: 10.1021/nn400671z. Epub 2013 Mar 8.
5
Optical separation of mechanical strain from charge doping in graphene.在石墨烯中，通过光学方法将机械应变与电荷掺杂分离。
Nat Commun. 2012;3:1024. doi: 10.1038/ncomms2022.
6
Anisotropic hydrogen etching of chemical vapor deposited graphene.化学气相沉积石墨烯的各向异性氢刻蚀。
ACS Nano. 2012 Jan 24;6(1):126-32. doi: 10.1021/nn202996r. Epub 2011 Dec 23.
7
Graphene growth using a solid carbon feedstock and hydrogen.使用固态碳原料和氢气生长石墨烯。
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8
Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene.氢气在化学气相沉积生长大单晶石墨烯中的作用。
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