The Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, 1 University Station C2200, Austin, Texas 78712-0292, USA.
ACS Nano. 2011 Sep 27;5(9):7656-61. doi: 10.1021/nn202802x. Epub 2011 Aug 31.
Graphene has been grown on Cu at elevated temperatures with different carbon sources (gaseous hydrocarbons and solids such as polymers); however the detailed chemistry occurring at the Cu surface is not yet known. Here, we explored the possibility of obtaining graphene using amorphous-carbon thin films, without and with hydrogen gas added. Graphene is formed only in the presence of H(2)(g), which strongly suggests that gaseous hydrocarbons and/or their intermediates are what yield graphene on Cu through the reaction of H(2)(g) and the amorphous carbon. The large area, uniform monolayer graphene obtained had electron and hole mobilities of 2520 and 2050 cm(2) V(-1) s(-1), respectively.
在不同的碳源（气态烃和聚合物等固体）存在的情况下，在高温下将石墨烯生长在 Cu 上；然而，Cu 表面发生的详细化学反应尚不清楚。在这里，我们探索了使用非晶态碳薄膜获得石墨烯的可能性，薄膜中有无添加氢气。只有在 H(2)(g)存在的情况下才会形成石墨烯，这强烈表明，通过 H(2)(g)和非晶态碳的反应，气态烃及其中间体是在 Cu 上生成石墨烯的原因。所获得的大面积、均匀的单层石墨烯的电子和空穴迁移率分别为 2520 和 2050 cm(2) V(-1) s(-1)。
