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应变HgTe中拓扑表面态的电子-空穴不对称性。

Electron-hole asymmetry of the topological surface states in strained HgTe.

作者信息

Jost Andreas, Bendias Michel, Böttcher Jan, Hankiewicz Ewelina, Brüne Christoph, Buhmann Hartmut, Molenkamp Laurens W, Maan Jan C, Zeitler Uli, Hussey Nigel, Wiedmann Steffen

机构信息

High Field Magnet Laboratory-European Magnetic Field Laboratory, Radboud University, 6525 ED Nijmegen, The Netherlands.

Institute for Molecules and Materials, Radboud University, 6525 ED Nijmegen, The Netherlands.

出版信息

Proc Natl Acad Sci U S A. 2017 Mar 28;114(13):3381-3386. doi: 10.1073/pnas.1611663114. Epub 2017 Mar 9.

DOI:10.1073/pnas.1611663114
PMID:28280101
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5380086/
Abstract

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron-hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected.

摘要

拓扑绝缘体是一类新型材料,其体相绝缘而表面态具有拓扑保护的金属特性。尽管人们普遍认为这些表面态呈现出狄拉克型色散,在狄拉克点上下是对称的,但费米能级两侧的这种精确等效性尚未得到实验证实。在此,我们对三维拓扑绝缘体——应变碲化汞进行了详细的输运研究,这对这一主流观点提出了强烈挑战。首先,通过观测双极性表面量子霍尔效应以及塞贝克效应和能斯特效应中的量子振荡,我们证实了仅存在表面主导的输运。其次,我们表明,虽然表面电子的热电势由扩散驱动,但对于空穴表面载流子而言,扩散和声子拖拽贡献都至关重要。表面态色散关系强烈偏离线性,空穴的色散比电子平坦得多,这解释了热电响应中的这种独特行为。这些发现表明,拓扑绝缘体中的金属表面态既能表现出强烈的电子 - 空穴不对称性,又能强烈偏离线性色散,但仍受到拓扑保护。

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本文引用的文献

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Bismuth Telluride and Its Alloys as Materials for Thermoelectric Generation.碲化铋及其合金作为热电发电材料
Materials (Basel). 2014 Mar 28;7(4):2577-2592. doi: 10.3390/ma7042577.
2
Transport properties of a 3D topological insulator based on a strained high-mobility HgTe film.基于应变高迁移率 HgTe 薄膜的 3D 拓扑绝缘体的输运性质。
Phys Rev Lett. 2014 May 16;112(19):196801. doi: 10.1103/PhysRevLett.112.196801. Epub 2014 May 14.
3
Ambipolar surface state thermoelectric power of topological insulator Bi2Se3.拓扑绝缘体 Bi2Se3 的双极性表面态热电功率。
Nano Lett. 2014;14(4):1701-6. doi: 10.1021/nl4032154. Epub 2014 Mar 12.
4
Quantum oscillations in magnetothermopower measurements of the topological insulator Bi2Te3.拓扑绝缘体 Bi2Te3 的磁热输运测量中的量子振荡。
Phys Rev Lett. 2012 Dec 14;109(24):246602. doi: 10.1103/PhysRevLett.109.246602. Epub 2012 Dec 10.
5
The Nernst effect and the boundaries of the Fermi liquid picture.能斯特效应与费米液体图像的边界
J Phys Condens Matter. 2009 Mar 18;21(11):113101. doi: 10.1088/0953-8984/21/11/113101. Epub 2009 Feb 9.
6
Quantum Hall effect from the topological surface states of strained bulk HgTe.应变体 HgTe 的拓扑表面态中的量子霍尔效应。
Phys Rev Lett. 2011 Mar 25;106(12):126803. doi: 10.1103/PhysRevLett.106.126803. Epub 2011 Mar 22.
7
Quantum oscillations and hall anomaly of surface states in the topological insulator Bi2Te3.拓扑绝缘体 Bi2Te3 中表面态的量子振荡和 hall 反常。
Science. 2010 Aug 13;329(5993):821-4. doi: 10.1126/science.1189792. Epub 2010 Jul 29.
8
A tunable topological insulator in the spin helical Dirac transport regime.自旋螺旋狄拉克输运 regime 中的可调谐拓扑绝缘体。 (注:“regime”常见释义为“政权;政体;管理制度;统治方式;生活状况;养生法;(军队的)特别训练计划;(自然现象或过程的)物理条件范围;(学科、活动等的)领域;状态” ,这里结合语境可能是“状态”等意思,由于不清楚确切所指,保留英文未翻译完整 )
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