Gusev Gennady M, Kvon Ze D, Levin Alexander D, Mikhailov Nikolay N
Instituto de Física, Universidade de São Paulo, São Paulo 135960-170, Brazil.
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia.
Nanomaterials (Basel). 2021 Dec 11;11(12):3364. doi: 10.3390/nano11123364.
The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron-3D hole scattering.
对三维拓扑绝缘体（3D TI）的80纳米厚应变HgTe薄膜的热电响应进行了实验研究。观察到一种双极性热功率，其中费米能级从导带移动到价带体带。理论与实验的比较表明，热功率主要归因于声子拖拽贡献。在二维狄拉克电子与体空穴态共存的区域，由于二维电子 - 三维空穴散射，塞贝克系数发生了改变。
