Kim Ju Hwan, Yu Da-Hyeon, Kim Hak Rim
Department of Pharmacology, College of Medicine, Dankook University, Cheonan 31116, Korea.
Korean J Physiol Pharmacol. 2017 Mar;21(2):179-188. doi: 10.4196/kjpp.2017.21.2.179. Epub 2017 Feb 21.
With the explosive increase in exposure to radiofrequency electromagnetic fields (RF-EMF) emitted by mobile phones, public concerns have grown over the last few decades with regard to the potential effects of EMF exposure on the nervous system in the brain. Many researchers have suggested that RF-EMFs can effect diverse neuronal alterations in the brain, thereby affecting neuronal functions as well as behavior. Previously, we showed that long-term exposure to 835 MHz RF-EMF induces autophagy in the mice brain. In this study, we explore whether short-term exposure to RF-EMF leads to the autophagy pathway in the cerebral cortex and brainstem at 835 MHz with a specific absorption rate (SAR) of 4.0 W/kg for 4 weeks. Increased levels of autophagy genes and proteins such as LC3B-II and Beclin1 were demonstrated and the accumulation of autophagosomes and autolysosomes was observed in cortical neurons whereas apoptosis pathways were up-regulated in the brainstem but not in the cortex following 4 weeks of RF exposure. Taken together, the present study indicates that monthly exposure to RF-EMF induces autophagy in the cerebral cortex and suggests that autophagic degradation in cortical neurons against a stress of 835 MHz RF during 4 weeks could correspond to adaptation to the RF stress environment. However, activation of apoptosis rather than autophagy in the brainstem is suggesting the differential responses to the RF-EMF stresses in the brain system.
随着手机发射的射频电磁场(RF - EMF)暴露量呈爆发式增长,在过去几十年里,公众对电磁场暴露对大脑神经系统的潜在影响越来越担忧。许多研究人员认为,射频电磁场可导致大脑中多种神经元改变,进而影响神经元功能及行为。此前,我们发现长期暴露于835 MHz射频电磁场会诱导小鼠大脑发生自噬。在本研究中,我们探究短期暴露于835 MHz、比吸收率(SAR)为4.0 W/kg的射频电磁场4周是否会导致大脑皮层和脑干中的自噬途径。结果表明,自噬基因和蛋白质(如LC3B - II和Beclin1)水平升高,并且在皮层神经元中观察到自噬体和自溶酶体的积累,而在暴露于射频电磁场4周后,脑干中的凋亡途径上调,但皮层中未上调。综上所述,本研究表明每月暴露于射频电磁场会诱导大脑皮层发生自噬,并表明在4周内皮层神经元针对835 MHz射频应激的自噬降解可能对应于对射频应激环境的适应。然而,脑干中凋亡而非自噬的激活表明大脑系统对射频电磁场应激存在不同反应。