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飞秒激光退火工艺在柔性衬底上实现大面积高效可印刷 Cu(In,Ga)Se 薄膜太阳能电池的晶化工程。

Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process.

机构信息

Department of Materials Science and Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan, ROC.

Compound Semiconductor Solar Cell Department, Next Generation Solar Cell Division, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute , Hsinchu 31040, Taiwan, ROC.

出版信息

ACS Appl Mater Interfaces. 2017 Apr 26;9(16):14006-14012. doi: 10.1021/acsami.7b00082. Epub 2017 Apr 11.

DOI:10.1021/acsami.7b00082
PMID:28281352
Abstract

Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of In, V, and In. Consequently, the shunt leakage current and recombination centers were both greatly decreased, resulting in a near 20% enhancement in photovoltaic conversion efficiency.

摘要

喷墨打印方法因其具有快速处理、大规模生产和低成本非真空器件制造的潜力,成为制造大规模柔性铜铟镓硒(CIGS)薄膜光伏(TFPV)器件的一种可行方法。在这里,我们将飞秒激光退火(fs-LA)工艺引入喷墨打印 CIGS 薄膜的制备中。系统研究了 fs-LA 处理对喷墨打印 CIGS 薄膜的结构和光电性能的影响。结果表明,在过热条件下,薄膜表面形貌基本保持不变,而在 fs-LA 处理后,结晶质量得到显著提高。此外,通过优化激光束的激光扫描速率,实现了更好的化学计量组成,这可能归因于铟分凝现象大大减少,这有助于降低 In、V 和 In 的缺陷态。因此,旁路漏电流和复合中心都大大减少,导致光伏转换效率提高了近 20%。

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