InGaAs/GaAs量子点链结构的光电导弛豫机制

Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures.

作者信息

Kondratenko Serhiy V, Iliash Sviatoslav A, Vakulenko Oleg V, Mazur Yuriy I, Benamara Mourad, Marega Euclydes, Salamo Gregory J

机构信息

Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka St., Kyiv, 01601, Ukraine.

Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):183. doi: 10.1186/s11671-017-1954-7. Epub 2017 Mar 9.

DOI:10.1186/s11671-017-1954-7

PMID:28282982

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5344880/

Abstract

An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morphology of InGaAs epitaxial layers. Kinetics with 980 nm excitation are successfully described by equation that takes into account the linear recombination involving Shockley-Read centers in the GaAs spacers and bimolecular recombination via quantum-size states of InGaAs QWRs or QDs.

摘要

报道了对InGaAs/GaAs量子点链结构中光电导时间衰减的实验研究。测量了因对InGaAs量子阱线或量子点以及GaAs间隔层进行光谱选择光激发而产生的不同光电导弛豫。650nm激发后的光电导弛豫遵循拉伸指数规律，其衰减常数取决于InGaAs外延层的形态。980nm激发的动力学过程通过一个方程成功描述，该方程考虑了GaAs间隔层中涉及肖克利-里德中心的线性复合以及通过InGaAs量子阱线或量子点的量子尺寸态的双分子复合。