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寻址和可调色彩的压致光子发光条纹。

Addressable and Color-Tunable Piezophotonic Light-Emitting Stripes.

机构信息

Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069, Dresden, Germany.

Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.

出版信息

Adv Mater. 2017 May;29(19). doi: 10.1002/adma.201605165. Epub 2017 Mar 15.

Abstract

Piezophotonic light-emitting devices have great potential for future microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) due to the added functionality provided by the electromechanical transduction coupled with the ability of light emission. Piezophotonic light-emitting source based on Pb(Mg Nb )O -PbTiO (PMN-PT) bulk is severely restricted by many challenges, such as high voltage burden, low integration density, and micromanufacturing complexity. Developing chip-integrated devices or incorporating such photonic components onto a Si platform is highly sought after in this field. In this work, the authors overcome the abovementioned problems by introducing single-crystal PMN-PT thin films on Si as central active elements. Taking advantage of mature microfabrication techniques, arrays of PMN-PT actuators with small footprints and low operation voltages have been implemented. Each actuator can be individually addressed, generating local deformation to trigger piezophotonic luminescence from ZnS:Mn thin films. Moreover, the authors have realized continuous and reversible color manipulation of piezophotonic luminescence on a bilayer film of ZnS:Cu,Al/ZnS:Mn. The color tunability promises an extra degree of freedom and distinctly suggests its great potential in developing a more compact and colorful piezophotonic light sources and displays related applications together with the "single pixel" addressability.

摘要

压光电发光器件由于机电转换功能的增加以及发光的能力,在未来的微机电系统 (MEMS) 和纳机电系统 (NEMS) 中有很大的应用潜力。基于 Pb(Mg Nb )O-PbTiO (PMN-PT) 体的压光电发光光源受到许多挑战的严重限制,例如高电压负担、低集成密度和微制造复杂性。在该领域中,人们非常希望开发芯片集成器件或在 Si 平台上集成这种光子组件。在这项工作中,作者通过在 Si 上引入单晶 PMN-PT 薄膜作为中心有源元件来克服上述问题。利用成熟的微制造技术,实现了具有小足迹和低操作电压的 PMN-PT 致动器阵列。每个致动器都可以单独寻址,产生局部变形以触发 ZnS:Mn 薄膜的压光电致发光。此外,作者还实现了 ZnS:Cu,Al/ZnS:Mn 双层膜上压光电致发光的连续和可逆颜色调控。这种颜色可调性提供了额外的自由度,并明显表明其在开发更紧凑、更丰富多彩的压光电光源和显示器相关应用方面具有很大的潜力,同时具有“单像素”寻址能力。

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