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用于促进光催化水氧化和环境污染物降解的形状可控 CuO/还原氧化石墨烯/InO 杂化中的氧空位。

Oxygen Vacancies in Shape Controlled CuO/Reduced Graphene Oxide/InO Hybrid for Promoted Photocatalytic Water Oxidation and Degradation of Environmental Pollutants.

机构信息

Department of Environmental Science & Engineering, North China Electric Power University , Baoding 071003, China.

Department of Chemical Engineering, Curtin University , GPO Box U1987, Perth, Western Australia 6845, Australia.

出版信息

ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11678-11688. doi: 10.1021/acsami.7b01605. Epub 2017 Mar 27.

Abstract

A novel shape controlled CuO/reduced graphene oxide/InO (CuO/RGO/InO) hybrid with abundant oxygen vacancies was prepared by a facile, surfactant-free method. The hybrid photocatalyst exhibits an increased photocatalytic activity in water oxidation and degradation of environmental pollutants (methylene blue and Cr solutions) compared with pure InO and CuO materials. The presence of oxygen vacancies in CuO/RGO/InO and the formation of heterojunction between InO and CuO induce extra diffusive electronic states above the valence band (VB) edge and reduce the band gap of the hybrid consequently. Besides, the increased activity of CuO/RGO/InO hybrid is also attributed to the alignment of band edge, a process that is assisted by different Fermi levels between InO and CuO, as well as the charge transfer and distribution onto the graphene sheets, which causes the downshift of VB of InO and the significant increase in its oxidation potential. Additionally, a built-in electric field is generated on the interface of n-type InO and p-type CuO, suppressing the recombination of photoinduced electron-hole pairs and allowing the photogenerated electrons and holes to participate in the reduction and oxidation reactions for oxidizing water molecules and pollutants more efficiently.

摘要

一种具有丰富氧空位的新型形状控制的 CuO/还原氧化石墨烯/InO(CuO/RGO/InO)杂化物是通过一种简便、无表面活性剂的方法制备的。与纯 InO 和 CuO 材料相比,该杂化光催化剂在水氧化和环境污染物(亚甲基蓝和 Cr 溶液)的降解中表现出更高的光催化活性。CuO/RGO/InO 中氧空位的存在以及 InO 和 CuO 之间异质结的形成导致价带(VB)边缘上方产生额外的扩散电子态,并因此降低了杂化的带隙。此外,CuO/RGO/InO 杂化物活性的提高还归因于能带边缘的对齐,这一过程由 InO 和 CuO 之间不同的费米能级以及电荷转移和分布到石墨烯片上辅助,导致 VB 的向下移动以及其氧化电势的显著增加。此外,在 n 型 InO 和 p 型 CuO 的界面上产生了内置电场,抑制了光生电子-空穴对的复合,使光生电子和空穴能够更有效地参与还原和氧化反应,从而氧化水分子和污染物。

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